NCS36000DG ON Semiconductor, NCS36000DG Datasheet - Page 3

• Manufacturer Part Number: NCS36000DG
• Description: Op Amps PIR ASSP
• Manufacturer: ON Semiconductor

Specifications of NCS36000DG

• Lead Free Status / Rohs Status: Details

6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
7. Guaranteed By Design (Non−tested parameter).
8. Guaranteed By Design (Non−tested parameter).
ELECTRICAL CHARACTERISTICS
LDO Voltage Reference
System Oscillator
Window Comparator
Differential Amplifiers (Amplifier Circuit)
POR
Output Voltage
Supply Current
Comparator High Trip Level
Comparator Low Trip Level
Reference voltage for non−inverting input of
second amplifier
Oscillator Frequency
Lower Trip Threshold
Higher Trip Threshold
DC Gain
Common−mode Input Range
Power Supply Rejection Ratio
Output Drive Current
POR Release Voltage
OPERATING RANGES
Analog Power Supply
Analog Ground Reference
Supply Current (Standby, No Loads)
Digital Inputs (MODE)
OP1_P (Sensor Input) (Note 7)
Ambient Temperature
Digital Output (OUT, LED)
Parameter
(Note 6)
Rating
V
in
= 1 V, C
Push−Pull Output (10 mA Load)
in
V
= 100 nF, C
V
V
V
V
V
DD
DD
DD
DD
DD
DD
Test Conditions
http://onsemi.com
See Vh above
See Vl above
= 3.0 V to 5.75 V
R
C
V
= 3.0 V to 5.75V
= 5.0 V (Note 8)
= 5.0 V (Note 8)
= 5.0 V (Note 8)
= 5.0 V (Note 8)
3
DD
2
= 220 kW
= 100 nF
= 5.0 V
out
3
= 100 nF, for typical values T
AMP 1 IN
Symbol
Symbol
VREF
PSRR
CMIR
V
IREF
OSC
V
V
I
V
I
V
V
V
T
V
out1
DD
V
Av
POR
V
DD
SS
oh
ih
ol
A
m
il
h
l
A
0.67 *
2.413
1.641
2.007
0.7 *
VSS
VSS
Min
V
V
= 25°C; unless otherwise noted.
1.35
−40
Min
3.0
0.1
2.6
0.1
80
DD
DD
V
Typ
62.5
5.0
0.0
Typ
2.7
2.5
1.7
2.1
20
60
DD
V
V
V
V
V
170m
2.588
1.760
2.174
Max
5.75
0.28
V
Max
2.85
0.1
DD
0.3
0.3
DD
1.1
DD
DD
2.8
DD
1.1
85
50
25
DD
−
+
*
*
−
Unit
Unit
°C
mA
Hz
dB
dB
mA
V
V
A
V
V
V
V
V
V
V
V
V