LMN400E01-7 Diodes Zetex, LMN400E01-7 Datasheet - Page 3
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LMN400E01-7
Manufacturer Part Number
LMN400E01-7
Description
Manufacturer
Diodes Zetex
Datasheet
1.LMN400E01-7.pdf
(8 pages)
Specifications of LMN400E01-7
Lead Free Status / Rohs Status
Compliant
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q2)
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVdss
Zero Gate Voltage Drain Current (Drain Leakage Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Turn-Off Delay Time
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward Current
DS30750 Rev. 7 - 2
250
200
100
150
50
0
0
25
Characteristic
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3 Max Power Dissipation vs.
50
Ambient Temperature
75
100
125
Typical Characteristics
150
V
Symbol
R
V
V
(BR)DSS
I
I
td
I
td
C
I
GSSF
GSSR
DS(on)
C
V
GS(th)
D(on)
DS(on)
C
g
I
DSS
175
I
SM
(on)
(off)
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FS
oss
SD
iss
rss
S
@T
A
= 25°C unless otherwise specified
3 of 8
Min
500
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
500
450
350
300
250
200
150
100
400
0.09
0.88
Typ
260
1.6
0.6
1.6
1.2
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
0
lb = 10mA
0.5 1.0 1.5 2.0 2.5 3.0 3.5
lb = 9mA
Max
3.75
300
800
-10
2.5
1.5
1.5
⎯
10
⎯
⎯
50
25
20
40
V , COLLECTOR-BASE VOLTAGE (V)
1
3
2
5
lb = 8mA
CB
Voltage Drop (Pass Element PNP)
Fig. 4 Output Current vs.
Unit
mA
mS
mA
mA
μA
μA
μA
pF
pF
pF
ns
ns
V
V
V
Ω
V
lb = 7mA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
D
GS
GS
GS
GS
DS
GS
GS
GS
DS
GS
GS
DS
DS
DD
G
GS
lb = 6mA
= 200mA,
= 25 Ohm, R
= 0V, I
= 0V, V
= 20V, V
= -20V, V
= V
= 5V, I
= 10V, I
= 10V,
≥2*V
= 5V, I
= 10V, I
≥2*V
= -25V, V
= 30V, V
= 0V, I
lb = 5mA
GS
Test Condition
DS
DS(ON)
, I
D
D
D
S
(ON)
DS
D
D
D
lb = 4mA
4.0
= 300 mA*
= 10uA
= 50mA
= 50mA
DS
GS
GS
DS
= 0.25mA
= 500mA
= 500mA
= 60V
lb = 1mA
, I
= 0V
=10V,
L
T = 25°C
4.5
= 0V
= 0V, f = 1MHz
© Diodes Incorporated
D
A
= 150 Ohm
lb = 3mA
lb = 2mA
= 200 mA
5.0
LMN400E01
5.5