N25Q128A13ESF40F NUMONYX, N25Q128A13ESF40F Datasheet - Page 87

• Manufacturer Part Number: N25Q128A13ESF40F
• Description: NUMN25Q128A13ESF40F 128MB SPI FLASH MEMO
• Manufacturer: NUMONYX

9.1.9
DQ0
DQ1
DQ0
DQ1
C
S
S
C
Figure 17. Read OTP instruction and data-out sequence
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 8) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Program, Erase or Write
instructions:
Page Program (PP), Dual Input Fast Program (DIFP), Dual Input Extended Fast Program
(DIEFP), Quad Input Fast Program (QIFP), Quad Input Extended Fast Program (QIEFP),
Program OTP (POTP), Write to Lock Register (WRLR), Subsector Erase (SSE), Sector
Erase (SE), Bulk Erase (BE), Write Status Register (WRSR), Write Configuration Register
(WRCR), Write Enhanced Configuration Register (WRECR) and Write NV Configuration
Register (WRNVCR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
When the Fast POR feature is selected (Non Volatile Configuration Register bit 5) after the
first Write Enable instruction, the device enters in a latency time (~500 us), necessary to
internally complete the POR sequence with the modify algorithms. (See
POR.) During the POR latency time all the instructions are ignored with the exception of the
7
32 33 34
0
6
1
High Impedance
Dummy cycles
5
2
Instruction
4
35
3
3
36 37 38 39 40 41 42 43 44 45 46
4
2
5
1
6
0
7
MSB
7
23
8
6
22 21
9 10
5
DATA OUT 1
24-bit address
4
3
3
28 29 30 31
2
2
1
1
0
47
0
MSB
7
6
5
DATA OUT n
4
3
2
Section 11.1: Fast
1
0
MSB
Read_OTP
7
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