SKM 195 GB 126 DN SEMIKRON, SKM 195 GB 126 DN Datasheet
![88K1194](/photos/22/16/221674/3829188_sml.jpg)
SKM 195 GB 126 DN
Manufacturer Part Number
SKM 195 GB 126 DN
Description
88K1194
Manufacturer
SEMIKRON
Datasheet
1.SKM_195_GB_126_DN.pdf
(3 pages)
Specifications of SKM 195 GB 126 DN
Transistor Polarity
N Channel
Dc Collector Current
220A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Rohs Compliant
Yes
SEMITRANS
Trench IGBT Module
SKM 195GB126DN
SKM 195GAL126DN
Preliminary Data
Features
Typical Applications
Homogeneous Si
Trench = Trenchgate technology
V
High short circuit capability, self limiting to 6 x I
AC inverter drives
UPS
Electonic welders
CEsat
GB
with positive temperature coefficient
TM
GAL
2N
SKM 195GB126DN
c
Symbol
IGBT
Inverse diode
Freewheeling diode
Symbol
IGBT
Inverse diode
FWD
V
I
I
V
T
V
I
I
I
I
I
I
V
I
V
r
V
C
C
C
L
R
t
t
t
t
E
V
V
r
I
Q
E
V
V
r
I
Absolute Maximum Ratings T
Characteristics T
d(on)
r
d(off)
f
C
CRM
F
FRM
FSM
F
FRM
FSM
CES
CE
T
RRM
T
RRM
vj
ies
oes
res
CE
CC'+EE'
on
rr
CES
GES
isol
GE(th)
CE(TO)
CE(sat)
F
(TO)
rr
F
(TO)
, (T
= V
= V
(E
off
stg
EC
EC
)
)
Conditions
V
V
T
V
I
under following conditions
V
res., terminal-chip T
V
R
V
I
T
T
I
di/dt = 2000 A/µs
V
I
T
T
I
C
F
F
F
F
j
Gon
j
j
j
j
GE
GE
GE
GE
CC
GE
GE
Conditions
T
t
T
AC, 1 min.
T
t
t
T
T
t
= 150 A; V
= 150 A; T
= 150 A; V
= 150 A; T
= 25 (125) °C
= 150 A, V
= 25 (125) °C
= 25 (125) °C
= 25 (125) °C
= 25 (125) °C
p
p
p
p
c
OPERATION
c
c
c
= 1 ms
= 1 ms
= 10 ms; sin.; T
= 10 ms; sin.; T
= 25 (80) °C
= 25 (80) °C
= 25 (80) °C
= 25 (80) °C, t
= V
= 0, V
= 15 V, T
= 0, V
= 600 V, I
= ± 15 V
= 0 V
= R
CE
Goff
Download PDF here
c
CE
CE
, I
= 25 °C, unless otherwise specified
C
j
j
= 5 Ω, T
GE
GE
GE
= V
= 25 V, f = 1 MHz
j
= 125 ( ) °C
= 125 ( ) °C
C
= 6 mA
= 25 (125) °C
= 0 V; T
= 0 V, T
= 15 V, chip level
= 150 A
T
CES
stg
p
j
j
c
= 1 ms
= 150 °C
= 150 °C
= 25 (125) °C
, T
j
= 125 °C
c
j
j
j
= 25 (125) °C
= 25 °C, unless otherwise specified
= 25 (125) °C
= 25 (125) °C
- 40 ... + 150 (125)
220 (160)
200 (160)
200 (160)
440 (320)
Values
min.
1200
4000
1450
1450
± 20
440
440
5
4,7 (7,3)
1,6 (1,6) 1,8 (1,8)
1,6 (1,6) 1,8 (1,8)
0,75 (1)
16 (21)
1 (0,9)
1,7 (2)
1 (0,8) 1,1 (0,9)
4 (5,3)
1 (0,8) 1,1 (0,9)
4 (5,3)
10,5
14,5
typ.
300
560
100
200
200
5,8
0,2
0,9
0,8
40
33
Units
°C
4,7 (6)
4,7 (6)
V
A
A
V
V
A
A
A
A
A
A
max.
1,15
2,15
6,5
0,6
6,7
25
Units
mA
mΩ
mΩ
mΩ
mΩ
nH
mJ
µC
mJ
nF
nF
nF
ns
ns
ns
ns
V
V
V
V
V
A
V
V
A
Related parts for SKM 195 GB 126 DN
SKM 195 GB 126 DN Summary of contents
Page 1
SKM 195GB126DN TM SEMITRANS 2N Trench IGBT Module SKM 195GB126DN SKM 195GAL126DN Preliminary Data Features Homogeneous Si Trench = Trenchgate technology V with positive temperature coefficient CEsat High short circuit capability, self limiting Typical Applications AC ...
Page 2
Fig. 1 Typ. output characteristic, inclusive R Q di/dt = 2000 A/µ Thermal characteristics R per IGBT th(j-c) R per Inverse Diode th(j-c)D R per FWD th(j-c)FD R per module th(c-s) Mechanical ...
Page 3
UL Recognized File no 532 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made ...