J212-E3 Vishay, J212-E3 Datasheet - Page 5

• Manufacturer Part Number: J212-E3
• Description: 51K2093
• Manufacturer: Vishay

Specifications of J212-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 40mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Gate-source Cutoff Voltage: -6V

Document Number: 70234
S-04028—Rev. E, 04-Jun-01
200
160
120
100
80
40
0.1
10
10
0
8
6
4
2
0
1
1
0
100
b
g
b
T
V
I
is
f = 1 MHz
ig
D
ig
A
DS
= 10 mA
= 25_C
Common-Source Input Capacitance
On-Resistance vs. Drain Current
= 10 V
g
V
is
GS(off)
–4
V
DS
V
vs. Gate-Source Voltage
GS
= 5 V
200
V
= –5 V
I
D
GS(off)
Input Admittance
– Gate-Source Voltage (V)
– Drain Current (mA)
f – Frequency (MHz)
–8
= –2 V
V
DS
10
= 0 V
–12
V
DS
500
T
A
= 10 V
= 25_C
–16
1000
100
–20
_
100
0.1
50
40
30
20
10
10
0
5
4
3
2
1
0
1
Common-Source Reverse Feedback Capacitance
0.1
0
100
T
V
I
f = 1 MHz
D
Circuit Voltage Gain vs. Drain Current
A
DS
–b
b
= 10 mA
= 25_C
fg
= 10 V
fs
–4
V
V
vs. Gate-Source Voltage
DS
GS
V
200
GS(off)
I
= 5 V
A
Assume V
– Gate-Source Voltage (V)
R
D
Forward Admittance
J/SSTJ210 Series
V
L
– Drain Current (mA)
f – Frequency (MHz)
V
+
+
DS
–8
= –5 V
= 10 V
1 ) R
10 V
Vishay Siliconix
1
I
D
DD
g
V
fs
DS
= 15 V, V
R
L
L
–12
= 0 V
g
os
500
V
–g
DS
GS(off)
fg
= 5 V
www.vishay.com
g
–16
fs
= –2 V
1000
–20
10
7-5