AUIRF7304Q International Rectifier, AUIRF7304Q Datasheet

58T1280

AUIRF7304Q

Manufacturer Part Number
AUIRF7304Q
Description
58T1280
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRF7304Q

Module Configuration
Dual P Channel
Transistor Polarity
Dual P Channel
Continuous Drain Current Id
-4.3A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
0.09ohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
90 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.3 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Package / Case
SOIC N
Gate Charge Qg
14.7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF7304Q
Manufacturer:
IR
Quantity:
4 168
Part Number:
AUIRF7304QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
Features
l
l
l
l
l
l
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Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
I
I
I
I
P
V
dv/dt
T
T
R
Thermal Resistance
HEXFET
*Qualification standards can be found at http://www.irf.com/
D
D
D
DM
J
STG
D
GS
θJA
@ T
@ T
@ T
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dV/dT Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*
@T
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
®
is a registered trademark of International Rectifier.
10 Sec. Pulsed Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
e
Parameter
Parameter
fg
AUTOMOTIVE GRADE
g
GS
GS
@ -4.5V
@ -4.5V
GS
@ -4.5V
G2
G1
S2
S1
1
2
3
4
Top View
8
7
6
5
D1
D1
D2
D2
V
R
I
Typ.
D
–––
(BR)DSS
DS(on)
-55 to + 150
AUIRF7304Q
Max.
0.016
± 12
-4.7
-4.3
-3.4
-5.0
-17
2.0
max.
SO-8
®
Max.
62.5
0.090Ω
-4.3A
-20V
Units
Units
W/°C
°C/W
V/ns
°C
W
A
V
1

Related parts for AUIRF7304Q

AUIRF7304Q Summary of contents

Page 1

... AUTOMOTIVE GRADE Top View Parameter @ -4. -4. -4. Parameter fg ® V -20V (BR)DSS R max. 0.090Ω DS(on) I -4.3A D SO-8 AUIRF7304Q Max. Units -4.7 -4.3 A -3.4 -17 2.0 W 0.016 W/°C ± -5.0 V/ns - 150 °C Typ. Max. Units ––– 62.5 °C/W 1 ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1. -1.5V 20μs PULSE WIDTH T = 25°C J 0.1 0.01 0 Drain-to-Source Voltage (V) DS ...

Page 5

1MHz iss rss oss iss 1000 C oss C rss 500 0 ...

Page 6

T , Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com V DS 90% 10% ...

Page 7

Charge www.irf.com Current Regulator Same Type as D.U.T. 50KΩ .2μF 12V .3μF D.U. -3mA Current Sampling Resistors - ...

Page 8

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...

Page 11

... Ordering Information Base part Package Type number AUIRF7304Q SO-8 www.irf.com Standard Pack Form Quantity Tube 95 Tape and Reel 2500 Complete Part Number AUIRF7304Q AUIRF7304QTR 11 ...

Page 12

... IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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