NTMD5836NL ON Semiconductor, NTMD5836NL Datasheet - Page 4

• Manufacturer Part Number: NTMD5836NL
• Description: 55T6925
• Manufacturer: ON Semiconductor

Specifications of NTMD5836NL

• Module Configuration: Dual N Channel
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.0095ohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes

ELECTRICAL CHARACTERISTICS
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 10)
DRAIN−SOURCE DIODE CHARACTERISTICS
9. Pulse Test: pulse width v 300 ms, duty cycle v 2%
10. Switching characteristics are independent of operating junction temperatures
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
Symbol
(T
Q
t
Q
t
d(OFF)
d(ON)
V
G(TOT)
Q
Q
Q
J
V
t
G(TH)
R
T
T
RR
t
t
SD
GS
GD
GP
RR
= 25°C unless otherwise specified)
r
f
a
b
G
V
V
V
V
I
10 A, CH2: I
V
CH1: I
GS
D
GS
GS
V
GS
http://onsemi.com
GS
CH1: I
= 10 A, CH2: I
GS
I
= 10 V, V
= 7 A
= 10V, V
D
= 4.5 V, V
= 0 V, dISD/dt = 100 A/ms,
= 4.5 V, V
= 10 A, CH2: I
= 0 V,
D
Test Condition
D
= 10 A, CH2: I
=
4
D
2.5 W
DS
DS
DD
DS
= 20V, I
= 20 V, I
D
= 20 V, CH1:
= 20 V, CH1:
= 7 A, R
T
T
D
J
J
= 125°C
= 7 A
= 25°C
D
D
D
= 7 A
= 10A
= 7 A
G
=
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch
Min
11.5
15.5
0.85
0.65
0.73
Typ
8.5
3.5
0.9
6.0
8.5
2.4
1.0
6.9
2.8
7.2
4.0
3.2
3.3
1.2
2.1
16
22
14
26
27
17
14
13
9.0
11
36
16
15
19
Max
1.2
1.2
50
23
11
Unit
nC
ns
ns
nC
V
W
V