AUIRF1324WL International Rectifier, AUIRF1324WL Datasheet - Page 2

• Manufacturer Part Number: AUIRF1324WL
• Description: 54T8935
• Manufacturer: International Rectifier

Specifications of AUIRF1324WL

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 240A
• Drain Source Voltage Vds: 24V
• On Resistance Rds(on): 0.00116ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 300W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.3 mOhms
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 382 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Package / Case: TO-262WL
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Notes:

‚
ƒ
Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
temperature. Package limitation current is 240A. Note that current
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
2
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
R
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 50Ω, I
/ΔT
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 195A, V
, starting T
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.028mH
Ãd
Parameter
Parameter
J
g
= 25°C (unless otherwise specified)
- Q
J
gd
= 25°C (unless otherwise specified)
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.022 –––
–––
210
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
24
„
…
†
‡
ˆ
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
I
C
as C
C
SD
oss
θ
oss
oss
7630
3390
1960
4660
4685
1.16
≤ 195A, di/dt ≤ 600A/μs, V
–––
–––
–––
–––
–––
–––
–––
120
200
110
––– 382
–––
–––
395
345
2.4
1.9
58
36
84
18
75
46
45
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
1530
-200
1.30
–––
–––
–––
250
200
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
593
518
–––
4.0
1.3
DS
20
69
68
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
μA
nA
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig.5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 195A
= 195A, V
= 195A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
= 2.7Ω
= V
= 10V, I
= 24V, V
= 19V, V
=12V
= 19V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 16V
= 10V
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
g
g
D
S
DS
DS
DSS
D
D
DS
= 250μA
GS
GS
= 250μA
= 195A, V
= 195A
= 195A
= 0V to 19V
= 0V to 19V
DSS
=0V, V
, T
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
J
V
I
di/dt = 100A/μs
.
F
≤ 175°C.
R
= 195A
D
= 20V,
g
GS
= 5mA
J
GS
= 125°C
= 10V
= 0V
i
hÃ
, See Fig.11
www.irf.com
g
G
g
g
g
D
S