AUIRFR9024N International Rectifier, AUIRFR9024N Datasheet

AUIRFR9024N

Manufacturer Part Number

AUIRFR9024N

Description

54T8918

Manufacturer

International Rectifier

Datasheet

1.AUIRFR9024N.pdf (13 pages)

Specifications of AUIRFR9024N

Transistor Polarity

P Channel

Continuous Drain Current Id

-11A

Drain Source Voltage Vds

-55V

On Resistance Rds(on)

0.175ohm

Rds(on) Test Voltage Vgs

-10V

Power Dissipation Pd

38W

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

175 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

11 A

Power Dissipation

38 W

Mounting Style

SMD/SMT

Package / Case

DPAK

Gate Charge Qg

12.7 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFR9024N

Manufacturer:

Quantity:

12 500

Current page: 1 of 13
Download datasheet (2Mb)

www.irf.com

Features

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety

of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T

dv/dt

Thermal Resistance

HEXFET

*Qualification standards can be found at http://www.irf.com/

STG

θJC

θJA

@ T

Advanced Planar Technology

Low On-Resistance

P-Channel

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy(Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ -10V

Gate

AUIRFR9024N

D-Pak

Typ.

–––

300 (1.6mm from case )

AUIRFR9024N

AUIRFU9024N

-55 to + 150

HEXFET

Drain

Max.

0.30

± 20

-6.6

3.8

(BR)DSS

-11

-44

-10

DS(on)

-8

AUIRFU9024N

I-Pak

Max.

110

3.3

max.

Power MOSFET

Source

PD - 96351

0.175Ω

-55V

-11A

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRFR9024N

AUIRFR9024N Summary of contents

Page 1

... International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE G D AUIRFR9024N G Gate ) is 25°C, unless otherwise specified. A Parameter @ -10V GS @ -10V GS d Ã e Parameter PD - 96351 AUIRFR9024N AUIRFU9024N ® HEXFET Power MOSFET D V -55V (BR)DSS R max. 0.175Ω DS(on -11A ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of ...

Page 4

4 www.irf.com ...

Page 5

www.irf.com 5 ...

Page 6

6 www.irf.com ...

Page 7

www.irf.com 7 ...

Page 8

Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent • • • • G • SD • Period D = Waveform Body Diode Forward Current ...

Page 9

www.irf.com 9 ...

Page 10

10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... Ordering Information Base part Package Type AUIRFR9024N DPak AUIRFU9024N IPak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR9024N AUIRFR9024NTR AUIRFR9024NTRL AUIRFR9024NTRR AUIRFU9024N www.irf.com ...

Page 13

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

Related keywords

AUIRFR9024N datasheet
AUIRFR9024N data sheet
AUIRFR9024N pdf datasheet
AUIRFR9024N component
AUIRFR9024N part
AUIRFR9024N distributor
AUIRFR9024N RoHS
AUIRFR9024N datasheet download