AUIRL3705N International Rectifier, AUIRL3705N Datasheet

AUIRL3705N

Manufacturer Part Number

AUIRL3705N

Description

54T9027

Manufacturer

International Rectifier

Datasheet

1.AUIRL3705N.pdf (11 pages)

Specifications of AUIRL3705N

Transistor Polarity

N Channel

Continuous Drain Current Id

89A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

0.01ohm

Rds(on) Test Voltage Vgs

10V

Power Dissipation Pd

170W

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

10 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

89 A

Power Dissipation

170 W

Mounting Style

Through Hole

Package / Case

TO-220AB

Gate Charge Qg

65.3 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRL3705N

Manufacturer:

Quantity:

12 500

Current page: 1 of 11
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Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Features

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with the

fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other

applications.

dv/dt

Thermal Resistance

STG

θJC

θCS

θJA

Advanced Planar Technology

Logic-Level Gate Drive

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

@ T

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ 10V

Gate

Typ.

0.50

–––

300 (1.6mm from case )

AUIRL3705N

10 lbf

TO-220AB

HEXFET

-55 to + 175

Max.

in (1.1N

Drain

310

170

101

340

(BR)DSS

±16

5.0

DS(on)

Max.

0.90

–––

max.

Power MOSFET

Source

0.01Ω

89A

55V

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRL3705N

AUIRL3705N Summary of contents

Page 1

... Parameter @ 10V GS @ 10V GS d Ã e Parameter ® HEXFET Power MOSFET D V (BR)DSS R max. 0.01Ω DS(on) I 89A TO-220AB AUIRL3705N Drain Source Max 310 170 101 ±16 340 46 17 5.0 - 175 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. ––– ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

... Machine Model ESD Human Body Model Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com Automotive ...

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4 www.irf.com ...

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www.irf.com 5 ...

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6 www.irf.com ...

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www.irf.com 7 ...

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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent 8 + • • • ƒ - „ - • • • P.W. Period D = ...

Page 9

www.irf.com 9 ...

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... Ordering Information Base part Package Type AUIRL3705N TO-220 10 Standard Pack Form Quantity Tube 50 Complete Part Number AUIRL3705N www.irf.com ...

Page 11

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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