AUIRL7766M2TR International Rectifier, AUIRL7766M2TR Datasheet - Page 2

• Manufacturer Part Number: AUIRL7766M2TR
• Description: 54T9032
• Manufacturer: International Rectifier

Specifications of AUIRL7766M2TR

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 62.5W
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 51 A
• Power Dissipation: 62.5 W
• Gate Charge Qg: 44 nC
• Lead Free Status / Rohs Status: Details

ƒ Surface mounted on 1 in. square Cu
Notes  through Š are on page 11
V
ΔV
R
V
ΔV
gfs
R
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics @ T
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(still air).
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
oss
SD
g
sw
oss
rr
Q
Q
Q
Q
2
(BR)DSS
GS(th)
gs1
gs2
gd
godr
eff.
/ΔT
/ΔT
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
g
Parameter
Parameter
gs2
J
= 25°C (unless otherwise stated)
+ Q
gd
)
‰
clip heatsink (still air)
J
= 25°C (unless otherwise stated)
J
= 25°C (unless otherwise stated)
Min.
Min.
Min.
100
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.067
Typ.
Typ.
5305
2735
0.88
10.9
23.5
Typ.
–––
–––
-7.3
–––
–––
–––
–––
–––
120
460
195
270
370
–––
–––
–––
with small
9.6
8.0
8.7
4.5
44
19
35
16
24
49
45
83
Max. Units
Max. Units
Max.
-100
10.5
–––
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
204
125
2.5
5.0
1.3
10
66
51
68
mV/°C
Units
V/°C
mΩ
μA
nA
nC
nC
pF
nC
board with metalized back and with small
clip heatsink (still air)
ns
ns
Ω
V
V
S
A
V
‰ Mounted on minimum footprint full size
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig.11
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
di/dt = 100A/μs
D
D
I
I
S
F
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DS
DD
GS
DS
GS
GS
GS
G
= 31A
= 31A
= 31A, V
= 31A, V
= 6.8Ω
= V
= 25V, I
= 100V, V
= 100V, V
= 50V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 50V, V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
DD
GS
D
DS
DS
DS
D
D
= 250μA
D
GS
GS
Conditions
= 150μA
Conditions
= 31A
= 31A
Conditions
GS
GS
= 25V
= 0V
= 26A
= 1.0V, f=1.0MHz
= 80V, f=1.0MHz
= 0V to 80V
= 0V
= 10V
i
= 0V
= 0V, T
i
D
i
i
= 5.0mA
www.irf.com
i
J
= 125°C
G
D
S