IRF7103 International Rectifier, IRF7103 Datasheet - Page 2

• Manufacturer Part Number: IRF7103
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7103

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.13Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / Rohs Status: Not Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7103
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
S
GSS
SM
on
DSS
d(on)
r
d(off)
f
rr
V
fs
(BR)DSS
GS(th)
D
S
oss
iss
rss
SD
DS(ON)
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by
T
I
max. junction temperature.
SD
J
150°C
1.8A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
90A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Pulse width
Min. Typ. Max. Units
–––
–––
––– 0.049 –––
––– 0.11 0.13
––– 0.16 0.20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
–––
–––
Surface mounted on FR-4 board, t
50
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
–––
––– -100
290
140
–––
110
4.0
6.0
–––
–––
3.8
1.2
3.5
9.0
8.0
12
45
37
25
70
–––
–––
–––
100
–––
–––
–––
–––
–––
170
–––
100
1.2
3.0
2.0
25
30
20
20
70
50
2.0
12
300µs; duty cycle
V/°C
nH
µA
nA
ns
nC
pF
ns
nC
A
V
V
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,6mm(0.25in.)
from package and center
of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 2.0A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 25
= 0V, I
= 40V, V
= 10V, I
= 4.5V, I
= V
= 15V, I
= 40V, V
= 20V
= - 20V
= 25V
= 10V
= 0V
= 25V
= 25V
2%.
GS
, I
D
F
S
10sec.
D
D
D
= 250µA
D
= 1.5A
GS
= 1.5A, V
GS
Conditions
Conditions
= 250µA
= 3.0A
= 3.0A
= 1.5A
= 0V, T
= 0V
D
= 1mA
GS
J
G
= 55 °C
= 0V
G
S
+L
D
S
D
)
S
D