IRFR13N20D International Rectifier, IRFR13N20D Datasheet - Page 7

• Manufacturer Part Number: IRFR13N20D
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR13N20D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.235Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 13A
• Power Dissipation: 110W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
IRFR13N20D/IRFU13N20D
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7