SFT1440-E ON Semiconductor, SFT1440-E Datasheet - Page 2

• Manufacturer Part Number: SFT1440-E
• Description: MOSFET Power ZENSOT23TVSARRAY36V
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
P.G
0
10V
0
0V
PW=10μs
D.C.≤1%
V IN
2
Parameter
Drain-to-Source Voltage, V DS -- V
4
V IN
6
G
50Ω
I D -- V DS
8
V DD =200V
D
10
S
I D =0.8A
R L =250Ω
12
SFT1440
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
14
V OUT
16
I D =10mA, V GS =0V
V DS =480V, V GS =0V
V GS =±24V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =0.8A
I D =0.8A, V GS =10V
V DS =30V, f=1MHz
V DS =30V, f=1MHz
V DS =30V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =300V, V GS =10V, I D =1.5A
V DS =300V, V GS =10V, I D =1.5A
V DS =300V, V GS =10V, I D =1.5A
I S =1.5A, V GS =0V
18
IT15875
20
SFT1440
Conditions
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
V DS =10V
1
2
3
Gate-to-Source Voltage, V GS -- V
4
5
min
I D -- V GS
600
3.0
6
7
Ratings
8
typ
0.85
130
1.0
6.2
4.0
9.1
6.3
1.4
3.6
9
25
15
18
19
10
11 12 13 14
max
±10
100
5.0
8.1
1.2
No. A1816-2/4
IT15876
Unit
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
Ω
V
V
V
15