6AM13 Renesas Electronics America, 6AM13 Datasheet
6AM13
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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...
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... Silicon N-Channel/P-Channel Complementary Power MOS FET Application High speed power switching Features Low on-resistance N-channel: R 0.075 , V DS(on) P-channel DS(on) Capable gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 6AM13 Array = – – ADE-208-1217 (Z) 1st. Edition Mar. 2001 ...
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... Outline SP-12TA Pch Nch Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes µs, duty cycle 2. 6 devices operation ...
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... Max Unit Test conditions — mA — ±100 µ ±10 µ ± –250 µ – ...
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... Maximum Channel Dissipation Curve 6 Condition : Channel dissipation of each die is identical 5 6 Device Operation 4 Device Operation 4 2 Device Operation 1 Device Operation Ambient Temperature Ta (°C) Maximum Safe Operation Area (P-Channel) – 50 – 30 – 10 – 3 – 1 Operation in this area is limited by R (on) – 0 25° ...
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... Gate to Source Voltage V Static Drain to Source on State 0.25 = –4 V Pulse Test 0.20 –10 V 0.15 0.10 0.05 0 –40 –50 –100 6AM13 Pulse Test –15 A –10 A – – –4 –6 –8 –10 (V) GS Resistance vs. Temperature –10 A –2, – – – ...
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... Forward Transfer Admittance vs. Drain Current Pulse Test –25° 25° 1.0 0.5 –0.2 –0.5 –1.0 –2 Drain Current I D Typical Capacitance vs. Drain to Source Voltage 10,000 1,000 100 10 0 –10 –20 –30 Drain to Source Voltage V 500 200 100 50 75° –0.2 – ...
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... V = – duty < (on –0.2 –0.5 –1.0 –2 –5 Drain Current I (A) D Reverse Drain Current vs. –20 Pulse Test –16 – –30V –10 V –8 –4 –10 –20 0 –0.4 Source to Drain Voltage V 6AM13 Source to Drain Voltage – 0 –0.8 –1.2 –1.6 –2.0 (V) SD ...
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... Maximum Safe Operation Area (N-Channel Operation in this area 0.3 is limited by R (on 25°C 0.1 0.05 0.1 0 Drain to Source Voltage V Typical Transfer Characteristics Pulse Test 75° Gate to Source Voltage 100 0 0 (V) DS 2.0 1.6 1.2 0.8 0.4 –25°C = 25° (V) GS ...
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... Drain Current I ( 0.16 0.12 0.08 0. 100 –40 1000 di/ 25°C V 500 Pulse Test 200 100 0.5 1 Reverse Drain Current I 6AM13 Static Drain to Source on State Resistance vs. Temperature Pulse Test 120 160 Case Temperature T (°C) C Body to Drain Diode Reverse Recovery Time = 0 GS ...
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... Typical Capacitance vs. Drain to Source Voltage 10000 3000 Ciss 1000 Coss 300 Crss 100 Drain to Source Voltage V Switching Characteristics 500 t d (off) 200 t 100 duty < (on 0.2 0.5 1.0 2 Drain Current I 100 1MHz ( • DD • (A) D Dynamic Input Characteristics Gate Charge Qg (nc) Reverse Drain Current vs ...
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... Package Dimensions 31.3 24.4 16.4 3.2 2.54 1 +0.2 –0.3 0.1 0.3 3.8 0.85 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6AM13 As of January, 2001 Unit: mm 5.0 0.2 2.0 0.1 2.2 0.2 +0.1 0.55 –0.06 SP-12TA — — 6.1 g ...
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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...