VQ2001J Vishay, VQ2001J Datasheet - Page 3

• Manufacturer Part Number: VQ2001J
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of VQ2001J

• Number Of Elements: 4
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 600mA
• Power Dissipation: 1.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70217
S-04279—Rev. E, 16-Jul-01
–2.0
–1.6
–1.2
–0.8
–0.4
175
150
125
100
1.65
1.50
1.35
1.20
1.05
0.90
0.75
75
50
25
0
0
0
–50
0
On-Resistance vs. Junction Temperature
–25
–5
–1
V
V
DS
DS
T
0
Output Characteristics
J
C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
– Junction Temperature (_C)
–10
rss
–2
25
Capacitance
V
I
D
GS
= –0.5 A
–15
= –4.5 V
V
50
GS
C
–3
oss
= –10 V
75
–20
C
iss
V
f = 1 MHz
V
I
GS
D
GS
100
= –0.1 A
= 0 V
–4
= –10 V
–25
125
–9 V
–8 V
–7 V
–6 V
–5 V
–4 V
_
–30
–5
150
–10 K
–1000
–100
–1 K
–800
–600
–400
–200
–18
–15
–12
–10
–9
–6
–3
–1
0
0
0
0
0
VP0300L/LS, VQ2001J/P
T
–0.5
Source-Drain Diode Forward Voltage
J
= 150_C
1000
–2
V
V
–1.0 –1.5
SD
GS
Q
Transfer Characteristics
V
I
g
D
– Source-to-Drain Voltage (V)
DS
– Gate-to-Source Voltage (V)
– Total Gate Charge (pC)
= –1 A
= –15 V
2000
Gate Charge
T
–4
J
= –55_C
–2.0
Vishay Siliconix
T
J
= 25_C
3000
–6
–2.5
V
I
D
–3.0
DS
= –1 A
125_C
4000
= –24 V
–8
25_C
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–3.5
5000
–10
–4.0
11-3