VQ1004J Vishay, VQ1004J Datasheet - Page 3

• Manufacturer Part Number: VQ1004J
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of VQ1004J

• Number Of Elements: 4
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 460mA
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70222
S-04379—Rev. E, 16-Jul-01
2.0
1.6
1.2
0.8
0.4
1.0
0.8
0.6
0.4
0.2
2.5
2.0
1.5
1.0
0.5
0
0
0
0
0
0
V
DS
On-Resistance vs. Drain Current
= 15 V
Ohmic Region Characteristics
0.4
V
2
1
V
DS
V
GS
Transfer Characteristics
GS
T
– Drain-to-Source Voltage (V)
J
I
= 10 V
– Gate-Source Voltage (V)
D
= –55_C
– Drain Current (A)
0.8
4
2
V GS = 10 V
1.2
6
3
125_C
25_C
1.6
8
4
8 V
7 V
6 V
5 V
4 V
3 V
2 V
_
2.0
10
5
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
80
60
40
20
0
0
0
0
–50
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
V
0.5 A
GS
–10
0.4
V
= 10 V
4
Normalized On-Resistance
DS
T
vs. Junction Temperature
2N6660, VQ1004J/P
V
J
GS
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
V
– Gate-Source Voltage (V)
GS
1.0 A
0.8
30
= 10 V
8
Vishay Siliconix
2.8 V
1.2
70
2.6 V
2.4 V
2.2 V
2.0 V
12
I
D
= 1.0 A
I
D
110
www.vishay.com
1.6
16
= 0.1 A
1.8 V
0.2 A
2.0
150
20
11-3