6AM15 Renesas Electronics America, 6AM15 Datasheet
6AM15
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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...
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... Silicon N/P Channel MOS FET Features Low on-resistance N Channel : R = 0.045 DS(on) P Channel : R = 0.085 DS(on) High speed switching 4 V gate drive device can be driven from 5 V source High density mounting Outline SP-12TA Pch Nch 6AM15 High Speed Power Switching typ. typ ADE-208-719 ( Nch Source 5 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note duty cycle 2. 6 Devices operation 3. Value 25° ...
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... DS(on 5.5 9 — fs Ciss — 500 — Coss — 260 — Crss — 110 — t — 10 — d(on) t — 50 — — 90 — d(off) t — 100 — — 0.9 — — 52 — rr 6AM15 Unit Test Conditions mA ±100 ± Note5 Note5 Note5 ...
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... Electrical Characteristics (P Channel) (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance ...
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... Condition : Channel dissipation of each die is identical 6 Device Operation 4 Device Operation 2 Device Operation 1 Device Operation 100 125 Case Temperature Tc (°C) Maximum Safe Operation Area (P-Channel) Operation in this area is limited by R (on 25°C – 3 – 10 – 30 – 100 Drain to Source Voltage V (V) DS 6AM15 150 ...
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... Main Characteristics ( N Channel ) Typical Output Characteristics Pulse Test Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 1.2 0.8 0 Gate to Source Voltage 3 2 (V) DS Static Drain to Source on State Resistance 1.0 Pulse Test 0.5 0 (V) GS ...
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... Tc (°C) 2000 1000 = °C 500 200 100 (A) DR Forward Transfer Admittance vs. Drain Current Tc = –25 °C 25 °C 75 ° Pulse Test 0 Drain Current I (A) D Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss MHz Drain to Source Voltage V DS 6AM15 = (V) ...
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... Main Characteristics ( N Channel ) Dynamic Input Characteristics 100 I = 10A Gate Charge Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage 1000 20 300 16 100 400 Qg (nc – Pulse Test 0 1.2 1.6 2 (V) SD Switching Characteristics t d(off d(on µs, duty < 0.5 0.1 ...
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... Main Characteristics ( N Channel ) Avalanche Test Circuit V DS Monitor Rg Vin Switching Time Test Circuit Vin Monitor D.U.T. Vin Monitor Vout Monitor R L Vin V DD Vout = 30 V td(on) Avalanche Waveform V DSS 1 2 • L • I • – DSS DD V (BR)DSS Waveform 90% 10% 10% 10% 90% 90% td(off 6AM15 f ...
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... Main Characteristics ( P Channel ) Typical Output Characteristics –20 –10 V –6 V –16 –5 V –12 –8 –4 0 –2 –4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage –4.0 –3.2 –2.4 –1.6 –0.8 0 –4 –8 Gate to Source Voltage –20 –4 V Pulse Test – ...
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... DR Forward Transfer Admittance vs. Drain Current Ta = –25 °C 25 °C 75 ° – Pulse Test –0.3 –1 –3 –10 –30 Drain Current I (A) D Typical Capacitance vs. Drain to Source Voltage MHz Ciss Crss Coss 0 –10 –20 –30 –40 Drain to Source Voltage V DS 6AM15 –100 = 0 –50 (V) ...
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... Main Characteristics ( P Channel ) Dynamic Input Characteristics – –25 V –50 V –20 – – – –25 V –80 –10 V –100 Gate Charge Reverse Drain Current vs. Source to Drain Voltage –20 –16 –12 –10 V –8 –5 V –4 0 –0.4 –0.8 Source to Drain Voltage 0 1000 I = – 300 – ...
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... Main Characteristics ( P Channel ) Avalanche Test Circuit V DS Monitor Rg Vin 50 –15 V Switching Time Test Circuit Vin Monitor Vin 50 – Monitor Vout Vin Monitor D.U. –30 V Vout td(on) Avalanche Waveform V DSS • L • I • – DSS Waveform 10% 90% 90% 10% td(off) tr 6AM15 DD V (BR)DSS 90% 10 ...
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... Package Dimensions 3.2 2.54 1 +0.2 31.3 –0.3 24.4 0.1 16.4 0.3 3.8 0.85 0.1 Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm 5.0 0.2 2.0 0.1 2.2 0.2 +0.1 0.55 –0.06 SP-12TA — — 6.1 g ...
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... Branch Office) URL : http://www.hitachi.com.hk 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. 6AM15 Colophon 2.0 ...