SI9953DY Vishay, SI9953DY Datasheet

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SI9953DY

Manufacturer Part Number
SI9953DY
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI9953DY

Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±20V
Continuous Drain Current
2.3A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70138
S-00652—Rev. K, 27-Mar-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
DS
–20
–20
G
G
(V)
S
S
1
1
2
2
1
2
3
4
Top View
SO-8
J
J
a
a
0.40 @ V
0.25 @ V
= 150 C)
= 150 C)
a
r
DS(on)
Dual P-Channel 20-V (D-S) MOSFET
Parameter
8
7
6
5
Parameter
GS
GS
a
a
10 sec.
= –4.5 V
( )
= –10 V
D
D
D
D
1
1
2
2
a
I
D
(A)
2.3
1.5
T
T
T
T
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
P-Channel MOSFET
G
1
D
1
S
Symbol
Symbol
1
D
T
R
1
J
V
V
I
P
P
, T
thJA
DM
I
I
I
DS
GS
D
D
S
D
D
stg
P-Channel MOSFET
G
2
www.vishay.com FaxBack 408-970-5600
–55 to 150
D
Vishay Siliconix
Limit
Limit
2
–1.7
S
62.5
–20
2.0
1.3
2
2.3
1.8
20
10
D
2
Si9953DY
Unit
Unit
C/W
W
W
V
V
A
A
A
C
1

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SI9953DY Summary of contents

Page 1

... For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70138 S-00652—Rev. K, 27-Mar-00 I (A) D 2.3 1 P-Channel MOSFET P-Channel MOSFET Symbol stg Symbol R thJA www.vishay.com FaxBack 408-970-5600 Si9953DY Vishay Siliconix Limit Unit – 2.3 1 –1.7 2 1.3 –55 to 150 C Limit Unit 62.5 C/W 1 ...

Page 2

... Si9953DY Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge ...

Page 3

... Document Number: 70138 S-00652—Rev. K, 27-Mar- 700 600 500 400 300 200 = 10 V 100 On-Resistance vs. Junction Temperature 2.0 1.6 1.2 0.8 0 –50 Si9953DY Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C oss C iss C rss – Drain-to-Source Voltage ( 1 – ...

Page 4

... Si9953DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 1.0 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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