SI4435DY-T1 Vishay, SI4435DY-T1 Datasheet
SI4435DY-T1
Specifications of SI4435DY-T1
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SI4435DY-T1 Summary of contents
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... V = – –30 30 0.035 @ V = –4 SO Top View Ordering Information: Si4435DY-T1–REV A Si4435DY-T1–A–E3 (Lead (Pb)-Free) Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si4435DY Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic ...
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... 4500 3600 2700 1800 900 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –50 Si4435DY Vishay Siliconix Transfer Characteristics T = -55°C C 25° C 125° – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si4435DY Vishay Siliconix Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0.6 0.4 = 250 µ 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...