SI4410DY-T1-REVA Vishay, SI4410DY-T1-REVA Datasheet

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SI4410DY-T1-REVA

Manufacturer Part Number
SI4410DY-T1-REVA
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI4410DY-T1-REVA

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0135Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
10A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4410DY-T1-REVA
Manufacturer:
TOSHIBA
Quantity:
3 221
Part Number:
SI4410DY-T1-REVA
Manufacturer:
VISHAY
Quantity:
349
Part Number:
SI4410DY-T1-REVA
Manufacturer:
SILICONIX
Quantity:
20 000
Company:
Part Number:
SI4410DY-T1-REVA
Quantity:
3 500
Notes
a.
Document Number: 71726
S-40838—Rev. L, 03-May-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
Ordering Information: Si4410DY-REVA
30
30
(V)
G
S
S
S
1
2
3
4
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
J
J
a
a
0.0135 @ V
Top View
0.020 @ V
= 150_C)
= 150_C)
SO-8
a
r
DS(on)
Parameter
Parameter
a
a
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
8
7
6
5
= 10 V
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
10
8
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
N-Channel MOSFET
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D
S
T
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
- 55 to 150
Limit
Vishay Siliconix
Limit
"20
2.3
2.5
1.6
30
10
50
50
22
8
Si4410DY
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
V
V
A
A
1

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SI4410DY-T1-REVA Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4410DY-REVA Si4410DY-T1-REVA (with Tape and Reel) Si4410DY-REVA-E3 (Lead free) Si4410DY-T1-A-E3 (Lead free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si4410DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Total Gate Charge (nC) g Document Number: 71726 S-40838—Rev. L, 03-May- 3000 2500 2000 1500 = 10 V 1000 500 40 50 2.0 1.5 1.0 0.5 0 Si4410DY Vishay Siliconix Transfer Characteristics 125_C C 25_C 10 - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si4410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0 250 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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