SI4431ADY-T1 Vishay, SI4431ADY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4431ADY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4431ADY-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 5.3A
• Power Dissipation: 1.35W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 71803
S-51472—Rev. D, 01-Aug-05
0.10
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
3
= 7.2 A
0.2
On-Resistance vs. Drain Current
= 15 V
6
V
V
SD
6
Q
GS
g
– Source-to-Drain Voltage (V)
I
= 4.5 V
0.4
– Total Gate Charge (nC)
D
– Drain Current (A)
9
Gate Charge
12
T
J
= 150_C
0.6
12
18
15
0.8
V
18
GS
T
24
J
= 10 V
= 25_C
1.0
_
21
1.2
30
24
2000
1600
1200
0.20
0.15
0.10
0.05
0.00
800
400
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
–25
D
GS
= 7.2 A
C
= 10 V
2
iss
6
T
V
V
0
C
J
GS
DS
– Junction Temperature (_C)
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
50
= 7.2 A
18
6
Si4431ADY
75
100
24
www.vishay.com
8
125
150
10
30
3