SI4812DY Vishay, SI4812DY Datasheet

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... Ordering Information Si4812DY Si4812DY-T1 (with Tape and Reel Si4812DY—E3 (Lead (Pb)-Free) Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel Top View ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T ...

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... Si4812DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET + Schottky) (MOSFET + Schottky) a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a a Schottky Diode Forward Voltage Schottky Diode Forward Voltage ...

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... Document Number: 71775 S-41426—Rev. G, 26-Jul- 1800 1500 1200 900 600 300 1.6 1.4 1.2 1.0 0.8 0 −50 Si4812DY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C −55_C − Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

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... Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 25_C J 1 0.1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Reverse Current (Schottky 0 0.01 0.001 20 V 0.0001 − Junction Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) ...

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... Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 71775 S-41426—Rev. G, 26-Jul-04 −2 − Square Wave Pulse Duration (sec) Si4812DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 85_C/W thJA ( − ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...