SI9433DY-T1 Vishay, SI9433DY-T1 Datasheet - Page 3

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SI9433DY-T1

Manufacturer Part Number
SI9433DY-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI9433DY-T1

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.045Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
5.4A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9433DY-T1
Manufacturer:
INTEL
Quantity:
1 899
Part Number:
SI9433DY-T1
Manufacturer:
SILICONIX
Quantity:
20 000
Part Number:
SI9433DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
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Part Number:
SI9433DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 70125
S-00652—Rev. J, 27-Mar-00
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
8
4
0
0
0
0
0
0
V
I
D
DS
= 5.1 A
On-Resistance vs. Drain Current
= 6 V
V
2
3
4
DS
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
V
– Drain Current (A)
Gate Charge
GS
4
6
8
= 5, 4.5, 4, 3.5, 3 V
V
GS
= 2.7 V
12
6
9
V
GS
= 4.5 V
2.5 V
12
16
8
2 V
10
15
20
4000
3000
2000
1000
2.0
1.6
1.2
0.8
0.4
20
16
12
8
4
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
V
I
–25
D
0.5
GS
= 5.1 A
V
V
= 4.5 V
2
DS
GS
T
Transfer Characteristics
J
0
1.0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
T
www.vishay.com FaxBack 408-970-5600
25 C
Capacitance
25
C
4
= 125 C
1.5
C
rss
Vishay Siliconix
50
2.0
6
75
C
Si9433DY
oss
–55 C
2.5
100
C
8
iss
3.0
125
150
3.5
10
3

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