MMDF2C02HDR2 ON Semiconductor, MMDF2C02HDR2 Datasheet - Page 7

• Manufacturer Part Number: MMDF2C02HDR2
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of MMDF2C02HDR2

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

12
10
100
8
6
4
2
0
10
1400
1200
1000
Figure 8. Gate−To−Source and Drain−To−Source
1
0
800
600
400
200
1
Q1
10
Q3
V
I
V
T
D
J
DD
GS
= 3 A
= 25°C
C
C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
= 10 V
= 10 V
iss
2
rss
V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DS
Q2
Voltage versus Total Charge
= 0 V
5
Figure 7. Capacitance Variation
t
t
d(off)
d(on)
Q
4
R
T
V
, TOTAL GATE CHARGE (nC)
G
GS
t
t
, GATE RESISTANCE (OHMS)
r
f
N−Channel
0
6
V
V
GS
DS
QT
10
= 0 V
5
8
C
rss
V
10
C
GS
10
oss
V
I
T
C
D
DS
J
iss
= 3 A
= 25°C
12
15
T
J
http://onsemi.com
= 25°C
14
100
24
20
16
12
8
4
0
20
7
1000
100
12
10
10
8
6
4
2
0
1200
1000
Figure 8. Gate−To−Source and Drain−To−Source
800
600
400
200
0
1
Q1
0
V
I
V
T
D
10
DD
GS
J
= 2 A
= 25°C
V
C
C
= 10 V
= 10 V
Q3
DS
iss
rss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
= 0 V
V
DS
Voltage versus Total Charge
5
Figure 7. Capacitance Variation
Q2
t
t
4
d(off)
d(on)
R
Q
G
V
T
, TOTAL GATE CHARGE (nC)
, GATE RESISTANCE (OHMS)
t
t
GS
f
r
0
P−Channel
QT
V
V
DS
GS
10
8
= 0 V
5
10
V
GS
12
C
C
C
I
T
D
iss
oss
J
rss
= 2 A
= 25°C
T
15
J
= 25°C
100
16
18
15
12
9
6
3
0
20