SI9424DY-T1 Vishay, SI9424DY-T1 Datasheet
SI9424DY-T1
Specifications of SI9424DY-T1
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SI9424DY-T1 Summary of contents
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... S-56950—Rev. E, 11-Jan-99 P-Channel 2.5-V (G-S) MOSFET I (A) D "7.7 "6 P-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A SYMBOL T = 25_C 70_C 25_C 70_C A T SYMBOL Siliconix was formerly a division of TEMIC Semiconductors Si9424DY Vishay Siliconix LIMIT " "7 "6.2 " 2 150 J stg ...
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... Si9424DY Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current B On-State Drain Current B B Drain Source On State Resistance Drain-Source On-State Resistance B Forward Transconductance B Diode Forward Voltage ...
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... 3000 2000 1000 On−Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0 Siliconix was formerly a division of TEMIC Semiconductors Si9424DY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss ...
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... Si9424DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Source−Drain Diode Forward Voltage 150_C 0.2 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 = 250 0.2 - 0.0 - 0.2 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction−to−Ambient 2 1 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...