CY62256LL-70SNCT Cypress Semiconductor Corp, CY62256LL-70SNCT Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY62256LL-70SNCT
Manufacturer Part Number
CY62256LL-70SNCT
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY62256LL-70SNCT.pdf
(14 pages)
Specifications of CY62256LL-70SNCT
Density
256Kb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
15b
Package Type
SNC N
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
50mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
28
Word Size
8b
Number Of Words
32K
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62256LL-70SNCT
Manufacturer:
ESMT
Quantity:
166
Document #: 38-05248 Rev. *F
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
10. The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a Write and either signal can
11. The minimum Write cycle time for Write Cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
7. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
8. At any given temperature and voltage condition, t
9. t
I
terminate a Write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the Write.
OL
HZOE
Parameter
/I
OH
, t
and 100 pF load capacitance.
HZCE
[10, 11]
, and t
HZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power-up
CE HIGH to Power-down
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
are specified with C
Over the Operating Range
L
= 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
[8]
[8]
Description
[8, 9]
[8, 9]
[8, 9]
[8]
HZCE
is less than t
LZCE
, t
HZOE
[7]
is less than t
HZWE
LZOE
Min.
55
55
45
45
40
25
CY62256−55
5
5
5
0
0
0
0
5
and t
, and t
SD
HZWE
.
Max.
55
55
25
20
20
55
20
is less than t
Min.
LZWE
70
70
60
60
50
30
CY62256−70
5
5
5
0
0
0
0
5
for any given device.
Max.
70
70
35
25
25
70
25
CY62256
Page 5 of 14
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
[+] Feedback