MMBT589LT1 ON Semiconductor, MMBT589LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBT589LT1
• Manufacturer: ON Semiconductor

Specifications of MMBT589LT1

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 2A
• Dc Current Gain (min): 100
• Power Dissipation: 710mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Not Compliant

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3) (Figure 1)
Collector −Emitter Saturation Voltage (Note 3) (Figure 3)
Base −Emitter Saturation Voltage (Note 3) (Figure 2)
Base −Emitter Turn−on Voltage (Note 3)
Cutoff Frequency
Output Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(f = 1.0 MHz)
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CES
EB
= −0.1 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, I
= −1.0 mA, V
= −500 mA, V
= −1.0 A, V
= 2.0 A, V
= −0.5 A, I
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
= −1.0 A, V
= −100 mA, V
= −30 Vdc, I
= −4.0 Vdc)
= −30 Vdc)
CE
B
B
B
B
CE
CE
= −0.05 A)
= 0.1 A)
= −0.2 A)
= −0.1 A)
CE
= −2.0 V)
CE
CE
B
E
= −2.0 V)
= −2.0 V)
E
C
= 0)
= 0)
= −2.0 V)
= 0)
= 0)
= −2.0 V)
= −5.0 V, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
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2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
I
BE(sat)
BE(on)
CBO
h
CES
EBO
f
FE
T
−5.0
Min
−30
−50
100
100
100
80
40
−
−
−
−
−
−
−
−
−
−0.25
−0.30
−0.65
Max
−0.1
−0.1
−0.1
−1.2
−1.1
300
15
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
V
V
V
−