MMBT589LT1 ON Semiconductor, MMBT589LT1 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
MMBT589LT1
Manufacturer Part Number
MMBT589LT1
Description
Manufacturer
ON Semiconductor
Datasheet
1.MMBT589LT1.pdf
(5 pages)
Specifications of MMBT589LT1
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
2A
Dc Current Gain (min)
100
Power Dissipation
710mW
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT589LT1
Manufacturer:
DIODES
Quantity:
1 928
Part Number:
MMBT589LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MMBT589LT1G
Manufacturer:
ON
Quantity:
15 000
Company:
Part Number:
MMBT589LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT589LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3) (Figure 1)
Collector −Emitter Saturation Voltage (Note 3) (Figure 3)
Base −Emitter Saturation Voltage (Note 3) (Figure 2)
Base −Emitter Turn−on Voltage (Note 3)
Cutoff Frequency
Output Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(f = 1.0 MHz)
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CES
EB
= −0.1 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, I
= −1.0 mA, V
= −500 mA, V
= −1.0 A, V
= 2.0 A, V
= −0.5 A, I
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
= −1.0 A, V
= −100 mA, V
= −30 Vdc, I
= −4.0 Vdc)
= −30 Vdc)
CE
B
B
B
B
CE
CE
= −0.05 A)
= 0.1 A)
= −0.2 A)
= −0.1 A)
CE
= −2.0 V)
CE
CE
B
E
= −2.0 V)
= −2.0 V)
E
C
= 0)
= 0)
= −2.0 V)
= 0)
= 0)
= −2.0 V)
= −5.0 V, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
I
BE(sat)
BE(on)
CBO
h
CES
EBO
f
FE
T
−5.0
Min
−30
−50
100
100
100
80
40
−
−
−
−
−
−
−
−
−
−0.25
−0.30
−0.65
Max
−0.1
−0.1
−0.1
−1.2
−1.1
300
15
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
V
V
V
−