SI5933DC-T1 Vishay, SI5933DC-T1 Datasheet - Page 4

• Manufacturer Part Number: SI5933DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5933DC-T1

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.11Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 2.7A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Si5933DC
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71238.
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
0.1
0.1
−50
2
1
2
1
10
10
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Single Pulse
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
50
10
I
−3
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
−1
10
1
−1
50
40
30
20
10
0
10
−4
10
−3
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
−2
Single Pulse Power
− T
t
1
A
Time (sec)
1
10
= P
t
−1
2
DM
Z
thJA
thJA
100
S-50366—Rev. D, 28-Feb-05
t
t
1
2
1
(t)
Document Number: 71238
= 90_C/W
10
600
10
100
600