MMPQ3906R1 ON Semiconductor, MMPQ3906R1 Datasheet - Page 2

• Manufacturer Part Number: MMPQ3906R1
• Manufacturer: ON Semiconductor

Specifications of MMPQ3906R1

• Transistor Polarity: PNP
• Number Of Elements: 4
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 40
• Power Dissipation: 200mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: SOIC
• Lead Free Status / Rohs Status: Not Compliant

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Turn−On Time
Turn−Off Time
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
CB
EB
CB
EB
= −10 mAdc, I
= −1.0 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −10 mAdc, I
= −10 mAdc, I
= −10 mAdc, V
= −10 mAdc, V
= −10 mAdc, I
= −4.0 Vdc, I
= −0.5 Vdc, I
= −30 Vdc, I
= −5.0 Vdc, I
E
C
B
B
B1
E
B
C
CE
CE
E
C
BE(off)
= 0)
= 0)
CE
CE
= −1.0 mAdc)
= −1.0 mAdc)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= I
= −1.0 Vdc)
= −20 Vdc, f = 100 MHz)
= −1.0 Vdc)
= −1.0 Vdc)
B2
Characteristic
= 0.5 Vdc, I
= −1.0 mAdc)
(Note 1)
B1
(T
= −1.0 mAdc)
A
= 25°C unless otherwise noted)
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2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
I
C
CBO
h
EBO
C
t
t
f
on
off
FE
T
ob
ib
−5.0
Min
−40
−40
200
40
60
75
−
−
−
−
−
−
−
−
−0.65
−0.1
Typ
160
180
200
250
155
3.3
4.8
43
−
−
−
−
−
−0.25
−0.85
Max
−50
−50
4.5
10
−
−
−
−
−
−
−
−
−
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ns
−