SI2308DS-T1 Vishay, SI2308DS-T1 Datasheet - Page 3

• Manufacturer Part Number: SI2308DS-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI2308DS-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2A
• Power Dissipation: 1.25W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / Rohs Status: Not Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70797
S09-0133-Rev. D, 02-Feb-09
1.0
0.8
0.6
0.4
0.2
0.0
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 2.0 A
2
= 30 V
1
V
V
DS
3
Q
GS
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
= 4.5 V
I
V
D
GS
Gate Charge
- Drain Current (A)
4
2
= 10 thru 5 V
6
6
3
V
GS
9
8
4
= 10 V
1 V, 2 V
4 V
3 V
10
12
5
400
300
200
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
9
6
3
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
= 2.0 A
= 10 V
6
1
V
V
Transfer Characteristics
DS
T
GS
0
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
oss
- Gate-to-Source Voltage (V)
25 °C
25
T
Capacitance
C
12
2
= 125 °C
50
Vishay Siliconix
C
iss
18
3
75
Si2308DS
- 55 °C
www.vishay.com
100
24
4
125
150
30
5
3