MTDF1N03HDR2 ON Semiconductor, MTDF1N03HDR2 Datasheet - Page 2

• Manufacturer Part Number: MTDF1N03HDR2
• Manufacturer: ON Semiconductor

Specifications of MTDF1N03HDR2

• Number Of Elements: 2
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Not Compliant

(1) Repetitive rating; pulse width limited by maximum junction temperature.
MTDF1N03HD
MAXIMUM RATINGS
Negative sign for P–Channel devices omitted for clarity
2
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
2 die operating
Steady State
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
(V DD = 30 Vdc, V GS = 10 Vdc, Peak I L = 2.4 Apk, L = 69 mH, R G = 25
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
(T J = 25 C unless otherwise noted)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ T A = 25 C
Linear Derating Factor
Drain Current — Continuous @ T A = 25 C
Continuous @ T A = 70 C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ T A = 25 C
Linear Derating Factor
Drain Current — Continuous @ T A = 25 C
Continuous @ T A = 70 C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ T A = 25 C
Linear Derating Factor
Drain Current — Continuous @ T A = 25 C
Continuous @ T A = 70 C
Pulsed Drain Current (1)
Rating
W
Motorola TMOS Power MOSFET Transistor Device Data
)
Figure 2. Minimum FR–4 or G–10 PCB
Symbol
T J , T stg
R THJA
R THJA
R THJA
V DGR
V DSS
V GS
E AS
I DM
I DM
I DM
P D
P D
P D
I D
I D
I D
I D
I D
I D
– 55 to 150
Max
1.25
0.63
0.42
3.33
100
200
300
200
2.8
2.2
5.0
2.0
1.6
1.6
1.3
30
30
10
23
16
13
20
mW/ C
mW/ C
mW/ C
Watts
Watts
Watts
Unit
C/W
C/W
C/W
mJ
V
V
V
A
A
A
A
A
A
A
A
A
C