AM29LV320DB90WMI Spansion Inc., AM29LV320DB90WMI Datasheet

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AM29LV320DB90WMI

Manufacturer Part Number
AM29LV320DB90WMI
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29LV320DB90WMI

Cell Type
NOR
Density
32Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
FBGA
Program/erase Volt (typ)
3/11.5 to 12.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
16mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29LV320DB90WMI
Manufacturer:
AMD
Quantity:
8 000
Part Number:
AM29LV320DB90WMIT
Manufacturer:
SPANSION
Quantity:
1 130
Am29LV320D
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please refer
to the S29AL032D datasheet for specifications and ordering information. Availability of this docu-
ment is retained for reference and historical purposes only.
April 2005
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that
originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro-
priate, and changes will be noted in a revision summary.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 23579
Revision C
Amendment 8
Issue Date December 14, 2005

Related parts for AM29LV320DB90WMI

AM29LV320DB90WMI Summary of contents

Page 1

Data Sheet This product has been retired and is not available for designs. For new and current designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please refer to the S29AL032D datasheet for specifications and ordering information. Availability of ...

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THIS PAGE LEFT INTENTIONALLY BLANK. ...

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... Am29LV320D 32 Megabit ( 8-Bit 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory This product has been retired and is not available for designs. For new and current designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please refer to the S29AL032D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. ...

Page 4

... GENERAL DESCRIPTION The Am29LV320D megabit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0–DQ15; byte mode data appears on DQ0–DQ7. The device is designed to be programmed in-system with the standard 3.0 volt V supply, and can also be programmed in standard EPROM programmers ...

Page 5

... Hardware Data Protection ...................................................... 21 Low VCC Write Inhibit ......................................................... 21 Write Pulse “Glitch” Protection ............................................ 21 Logical Inhibit ...................................................................... 21 Power-Up Write Inhibit ......................................................... 21 Common Flash Memory Interface (CFI Table 9. CFI Query Identification String .......................................... 22 Table 10. System Interface String................................................... 22 Table 11. Device Geometry Definition ............................................ 23 Table 12. Primary Vendor-Specific Extended Query ...................... 24 Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25 Reading Array Data ...

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... Ordering Information ............................................................ 54 .................... 53 Product Selector Guide ....................................................... 54 Global .................................................................................. 54 Ordering Information ............................................................ 54 ................... 53 Erase and Programming Performance ................................ 54 .................... 53 AC Characteristics ............................................................... 54 Erase and Program Operations ........................................... 54 ................... 53 Alternate CE# Control Erase and Program Operations ....... 54 Command Definitions .......................................................... 54 ................... 53 Global .................................................................................. 54 Common Flash Memory Interfacte (CFI) ............................. 54 Global .................................................................................. 54 Am29LV320D December 14, 2005 ...

Page 7

PRODUCT SELECTOR GUIDE Family Part Number Standard Voltage Range: V Speed Option 90R Standard Voltage Range: V Max Access Time (ns) CE# Access (ns) OE# Access (ns) BLOCK DIAGRAM RY/BY RESET# State WE# Control BYTE# Command ...

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CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 A20 10 WE# 11 RESET WP#/ACC 14 RY/BY# 15 A18 16 A17 ...

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... A17 Special Package Handling Instructions Special handling is required for Flash Memory prod- ucts in molded (TSOP, BGA) packages. The package and/or data integrity may be compro- mised if the package body is exposed to temperatures ° above 150 C for prolonged periods of time. December 14, 2005 48-Ball FBGA ...

Page 10

PIN DESCRIPTION A0–A20 = 21 Addresses DQ0–DQ14 = 15 Data Inputs/Outputs DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# = Chip Enable OE# = Output Enable WE# = Write Enable WP#/ACC = Hardware Write ...

Page 11

... AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV320D DEVICE NUMBER/DESCRIPTION Am29LV320D 32 Megabit ( 8-Bit 16-Bit) CMOS Boot Sector Flash Memory 3.0 Volt-only Read, Program and Erase Valid Combinations for TSOP Speed Packages (Ns) AM29LV320DT90R, AM29LV320DB90R Am29LV320DT90, ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is a latch ...

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Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word con- figuration, DQ0–DQ15 are active and controlled ...

Page 14

... V IL greater. The RESET# pin may be tied to the system reset cir- cuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firm- ware from the Flash memory. If RESET# is asserted during a program or erase op- eration, the RY/BY# pin remains a “ ...

Page 15

Table 2. Top Boot Sector Addresses (Am29LV320DT) (Sheet Sector Address Sector A20–A12 SA0 000000xxx SA1 000001xxx SA2 000010xxx SA3 000011xxx SA4 000100xxx SA5 000101xxx SA6 000110xxx SA7 000111xxx SA8 001000xxx SA9 001001xxx SA10 001010xxx SA11 001011xxx SA12 ...

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Table 2. Top Boot Sector Addresses (Am29LV320DT) (Sheet Sector Address Sector A20–A12 SA53 110101xxx SA54 110110xxx SA55 110111xxx SA56 111000xxx SA57 111001xxx SA58 111010xxx SA59 111011xxx SA60 111100xxx SA61 111101xxx SA62 111110xxx SA63 111111000 SA64 111111001 SA65 ...

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Table 4. Bottom Boot Sector Addresses (Am29LV320DB) (Sheet Sector Address Sector A20–A12 SA30 010111xxx SA31 011000xxx SA32 011001xxx SA33 011010xxx SA34 011011xxx SA35 011100xxx SA36 011101xxx SA37 011110xxx SA38 011111xxx SA39 100000xxx SA40 100001xxx SA41 100010xxx SA42 ...

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Autoselect Mode The autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equip- ment to automatically match a device to be pro- grammed with ...

Page 19

... The alternate method intended only for programming 8 Kbytes equipment, and requires V OE#. This method is compatible with programmer rou- 8 Kbytes tines written for earlier 3.0 volt-only AMD flash de- 8 Kbytes vices. For detailed information, contact an AMD 8 Kbytes representative. The device is shipped with all sectors unprotected. ...

Page 20

Write Protect (WP#) The Write Protect function provides a hardware method of protecting certain boot sectors without using V . This function is one of two provided by the ID WP#/ACC pin. If the system asserts V on the WP#/ACC ...

Page 21

START PLSCNT = 1 RESET Wait 1 μs No First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...

Page 22

... Secured Silicon Sector Flash Memory Region The Secured Silicon sector provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Se- cured Silicon sector uses a Secured Silicon Indicator Bit (DQ7) to indicate whether or not the Secured Sili- con sector is locked when shipped from the factory. ...

Page 23

... CC array data. For further information, please refer to the CFI Specifi- cation, CFI Publication 100, and the application note . The LKO “Common Flash Interface Version 1.4 Vendor Specific Extensions”. Contact an AMD representative for cop ies of these documents. Am29LV320D or WE ...

Page 24

Addresses Addresses (Word Mode) (Byte Mode) 10h 20h 11h 22h 12h 24h 13h 26h 14h 28h 15h 2Ah 16h 2Ch 17h 2Eh 18h 30h 19h 32h 1Ah 34h Addresses Addresses (Word Mode) (Byte Mode) 1Bh 36h 1Ch 38h 1Dh 3Ah ...

Page 25

... December 14, 2005 Table 11. Device Geometry Definition Data N 0016h Device Size = 2 byte 0002h Flash Device Interface description (refer to CFI publication 100) 0000h 0000h Max. number of bytes in multi-byte write = 2 0000h (00h = not supported) 0002h Number of Erase Block Regions within device 0007h 0000h ...

Page 26

Table 12. Primary Vendor-Specific Extended Query Addresses Addresses (Word Mode) (Byte Mode) 40h 80h 41h 82h 42h 84h 43h 86h 44h 88h 45h 8Ah 46h 8Ch 47h 8Eh 48h 90h 49h 92h 4Ah 94h 4Bh 96h 4Ch 98h 4Dh 9Ah ...

Page 27

COMMAND DEFINITIONS Writing specific address and data commands or se- quences into the command register initiates device op- erations. Table 14 on page 29 defines the valid register command sequences. Note that writing incor- rect address and data values or ...

Page 28

... Note that the ACC function and unlock bypass modes are not available when the device en- ters the Secured Silicon sector. See also “Secured Sil- icon Sector Flash Memory Region” on page 20 for further information. Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin ...

Page 29

Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Increment Address Last Address? Programming Completed Note: See Table 14 on page 29 for program command sequence. Figure 4. Program Operation Chip Erase Command ...

Page 30

DQ2, or RY/BY# in the erasing sector. Refer to “Write Operation Status” on page 30 for information on these status bits. Once the sector erase operation begins, only the Erase Suspend command is valid. All other com- mands are ignored. ...

Page 31

Command Definitions Table 14. Am29LV320D Command Definitions Command Sequence (Note 1) Addr Read (Note 6) 1 Reset (Note 7) 1 XXX Word 555 Manufacturer ID 4 Byte AAA Word 555 Device ID 4 Byte AAA Secured Silicon Word 555 Factory ...

Page 32

WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 15 on page 33 and the following subsections describe the function of these bits. ...

Page 33

RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

Page 34

Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. ...

Page 35

Status Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Erase Suspended Sector Erase-Suspend- Erase Read Suspend Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. ...

Page 36

ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...

Page 37

DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I RESET# Input Load Current LR I Output Leakage Current LO V Active Read Current CC I CC1 (Notes 1, 2) ...

Page 38

... DC CHARACTERISTICS Zero-Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 10. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note ° 1500 2000 2500 Time Frequency in MHz Figure 11. Typical I vs. Frequency CC1 Am29LV320D 3000 3500 4000 3.6 V 2.7 V ...

Page 39

TEST CONDITIONS Device Under Test C 6.2 kΩ L Note: Diodes are IN3064 or equivalent Figure 12. Test Setup Key To Switching Waveforms WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Figure 13. Input Waveforms ...

Page 40

AC CHARACTERISTICS Read-Only Operations Parameter JEDEC Std. Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

Page 41

AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std RESET# Pin Low (During Embedded Algorithms) t Ready to Read Mode (See Note) RESET# Pin Low (NOT During Embedded t Ready Algorithms) to Read Mode (See Note) t RESET# Pulse Width RP ...

Page 42

AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

Page 43

AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL AS t Address Setup Time to OE# low during toggle bit polling ASO t t ...

Page 44

AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device in word ...

Page 45

AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE Data 55h RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid ...

Page 46

AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

Page 47

AC CHARACTERISTICS Addresses CE# t OEH WE# OE Valid Data DQ6/DQ2 RY/BY# Note Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read ...

Page 48

AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std. Description t V Rise and Fall Time (See Note) VIDR Rise and Fall Time (See Note) VHH HH RESET# Setup Time for Temporary Sector t RSP Unprotect RESET# Hold ...

Page 49

AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector/Sector Block Protect or Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect, A6 ...

Page 50

AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time ELAX Data Setup ...

Page 51

AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation ...

Page 52

ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Program Time Word Program Time Accelerated Byte/Word Program Time Byte Mode Chip Program Time (Note 3) Word Mode Notes: 1. Typical program and erase times assume the following ...

Page 53

PHYSICAL DIMENSIONS FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA package xFBD 048 6. 12.00 mm PACKAGE 1.20 0.20 0.94 0.84 12.00 BSC 6.00 BSC 5.60 BSC 4.00 BSC 0.25 0.30 0.35 0.80 ...

Page 54

PHYSICAL DIMENSIONS TS 048—48-Pin Standard TSOP Am29LV320D Dwg rev AA; 10/99 December 14, 2005 ...

Page 55

... Corrected sector block size for SA60–SA62 to 3x64. Sector/Sector Block Protection and Unprotection Noted that sectors are erased in parallel. Secured Silicon Sector Flash Memory Region Noted changes for upcoming versions of these de- vices: reduced Secured Silicons ector size, different ESN location for top boot devices, and deletion of Se- cured Silicon erase functionality ...

Page 56

... Am29LV320D is now superceded by the S29AL032D device. Replaced all occurences of “SecSi Sector” with “Se- cured Silicon Sector” to reflect change of terminology. Common Flash Memory Interfacte (CFI) Added reference to application note. Deleted link to CFI documents available on the world wide web. Revision C+8 (December 14, 2005) ...

Page 57

... Copyright © 2000-2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...

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