AT45DB161B-TU Atmel, AT45DB161B-TU Datasheet - Page 27

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AT45DB161B-TU

Manufacturer Part Number
AT45DB161B-TU
Description
Manufacturer
Atmel
Datasheet

Specifications of AT45DB161B-TU

Density
16Mb
Access Time (max)
20ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
10mA
Mounting
Surface Mount
Pin Count
28
Lead Free Status / Rohs Status
Compliant

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Figure 2. Algorithm for Randomly Modifying Data
Notes:
Sector Addressing
2224I–DFLSH–10/04
PA11
0
0
0
0
1
1
1
1
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase/program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
PA10
0
0
0
0
1
1
1
1
MAIN MEMORY PAGE PROGRAM
PA9
0
0
0
1
0
0
1
1
THROUGH BUFFER
(82H, 85H)
PA8
0
0
1
0
0
1
0
1
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
(53H, 55H)
(58H, 59H)
PA7
START
X
X
X
X
X
X
X
0
END
provide address of
page to modify
MEMORY PAGE PROGRAM
(2)
(2)
PA6
BUFFER TO MAIN
BUFFER WRITE
X
X
X
X
X
X
X
0
(84H, 87H)
(83H, 86H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
PA5
0
X
X
X
X
X
X
X
PA4
X
X
X
X
X
X
X
0
AT45DB161B
PA3
X
X
X
X
X
X
X
0
Sector
13
14
15
16
0
1
2
3
27

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