MMPQ3467 ON Semiconductor, MMPQ3467 Datasheet - Page 3

MMPQ3467

Manufacturer Part Number
MMPQ3467
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMPQ3467

Transistor Polarity
PNP
Number Of Elements
4
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
20
Power Dissipation
1.2W
Frequency (max)
190MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
16
Package Type
SOIC
Lead Free Status / Rohs Status
Not Compliant
tal design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
pad size. This can vary from the minimum pad size for sol-
dering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
to ambient, and the operating temperature, T
values provided on the data sheet for the SO−16 package,
P
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
one can calculate the power dissipation of the device which
in this case is 1.0 watt.
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.0 watt. There are
other alternatives to achieving higher power dissipation
from the SO−16 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad™. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can
be doubled using the same footprint.
D
Surface mount board layout is a critical portion of the to-
The power dissipation of the SO−16 is a function of the
The values for the equation are found in the maximum
The 125°C/W for the SO−16 package assumes the use of
can be calculated as follows:
J(max)
θJA
, the thermal resistance from the device junction
P
, the maximum rated junction temperature of the
D
INFORMATION FOR USING THE SO−16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
=
150°C − 25°C
125°C/W
P
D
=
T
J(max)
R
0.024
θJA
0.6
0.275
7.0
− T
= 1.0 watt
A
SO−16 POWER DISSIPATION
A
. Using the
A
of 25°C,
http://onsemi.com
SO−16
3
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in or-
der to minimize the thermal stress to which the devices are
subjected.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
interface between the board and the package. With the cor-
rect pad geometry, the packages will self align when sub-
jected to a solder reflow process.
The melting temperature of solder is higher than the
ing should be 100°C or less.*
leads and the case must not exceed the maximum tem-
perature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering meth-
od, the difference shall be a maximum of 10°C.
260°C for more than 10 seconds.
mum temperature gradient shall be 5°C or less.
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
ing cooling.
Always preheat the device.
The delta temperature between the preheat and solder-
When preheating and soldering, the temperature of the
The soldering temperature and time shall not exceed
When shifting from preheating to soldering, the maxi-
After soldering has been completed, the device should
Mechanical stress or shock should not be applied dur-
SOLDERING PRECAUTIONS
0.060
0.155
1.52
4.0
0.050
1.270
inches
mm

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