BFP193T-GS08 Vishay, BFP193T-GS08 Datasheet - Page 2

• Manufacturer Part Number: BFP193T-GS08
• Manufacturer: Vishay

Specifications of BFP193T-GS08

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 50
• Power Dissipation: 420mW
• Frequency (max): 8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-143
• Lead Free Status / Rohs Status: Compliant

BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
www.vishay.com
2
Junction ambient
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
DC forward current transfer ratio V
amb
on glass fibre printed board (25 x 20 x 1.5) mm
= 25 °C, unless otherwise specified
Parameter
Parameter
1)
V
V
V
I
I
C
C
CE
CB
EB
CE
= 1 mA, I
= 50 mA, I
= 20 V, V
= 10 V, I
= 1 V, I
= 8 V, I
Test condition
Test condition
C
B
C
E
B
= 0
= 0
= 30 mA
BE
3
= 0
= 5 mA
plated with 35 μm Cu
= 0
V
Symbol
V
(BR)CEO
I
I
I
CBO
CEsat
h
CES
EBO
FE
Symbol
R
thJA
Min
12
50
Value
Typ.
250
100
0.1
Document Number 85015
Max
100
100
150
0.5
1
Rev. 1.3, 05-Sep-08
K/W
Unit
Unit
μA
nA
μA
V
V