MMDJ3N03BJTR2 ON Semiconductor, MMDJ3N03BJTR2 Datasheet - Page 4

• Manufacturer Part Number: MMDJ3N03BJTR2
• Manufacturer: ON Semiconductor

Specifications of MMDJ3N03BJTR2

• Transistor Polarity: NPN
• Number Of Elements: 2
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 85
• Power Dissipation: 1.25W
• Frequency (max): 72MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

100
1.2
0.8
0.4
10
2.0
1.5
1.0
0.5
0
0
0.1
0.1
25
Figure 9. Current−Gain Bandwidth Product
V
f
T
test
A
CE
= 25°C
= 1.0 MHz
= 10 V
50
T
Figure 11. Power Derating
Figure 7. V
A
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
T, TEMPERATURE (°C)
75
BE(on)
1.0
1.0
−55 °C
150°C
25°C
100
Voltage
V
125
CE
= 4.0 V
http://onsemi.com
15
10
10
4
1000
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
0.001
0.01
100
1.0
0.1
There are two limitations on the power handling ability of
The data of Figure 10 is based on T
10
10
0
0.1
0.1
Figure 10. Active Region Safe Operating Area
J(pk)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECONDARY BREAKDOWN LIMIT
Figure 8. Capacitance
may be calculated from the data in
V
R
1.0
1.0
5.0 ms
, REVERSE VOLTAGE (V)
0.5 ms
100 ms
J(pk)
10
10
= 150_C; T
C
C
ob
− V
J(pk)
C
100
100
CE
is