LX5510LQ MICROSEMI, LX5510LQ Datasheet
LX5510LQ
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LX5510LQ Summary of contents
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... RoHS Compliant / Pb-free Transition DC: 0418 LX5510LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510LQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. ESD procedures should be observed when handling this device. ...
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... Rev. 1.0d 2005-08-18 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier θ C 10°C/W ASE JC , θ A 50°C/W MBIENT Description Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET VC2 N OUT 2 ...
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... Iref For Icq = 65mA S21 ΔS21 Over 100MHz ΔS21 0°C to +70°C S11 S22 S12 Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 90% ON Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET LX5510 Units Min Typ Max 2.4 2.5 20 3.0 ...
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... Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm) 2.5 GHz -45 -47.5 -50 -52.5 -55 -57.5 - Figure 4 – ACP Data with 54MB/s 64 QAM OFDM -10 -20 -30 -40 -50 2.0 Microsemi Integrated Products Division LX5510 RODUCTION ATA HEET output power gain current 400 350 300 250 200 150 100 50 0 -20 -15 - ...
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... Figure 8 – EVM Data with 54Mb/s 64QAM OFDM 2.5 GHZ Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.85V, Icq = 80mA 214mA, Frequency = 2.45GHz) Microsemi Integrated Products Division LX5510 D S ATA HEET 2.4 GHz 2.45 GHz 2.5 GHz Output Power /[dBm] (Vc = 5V, Vref = 2 ...
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... InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION Location C4,C5 L1, TL1 TL2 TL3 Substrate Microsemi Integrated Products Division LX5510 D S ATA HEET Recommended BOM Value 2.2 pF (0402) 2.4 pF (0402) 3.3 pF (0402 (0603) 8.2 nH(0402) 350 Ω (0402) 200 Ω (0402) ...
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... solder coverage. 2. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET M I ILLIMETERS NCHES MIN MAX ...
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... InGaP HBT 2.4 – 2.5 GHz Power Amplifier Ø 1.50mm 4.00mm 3.30mm 3.30mm Side View 0.30mm 2.2mm Ø 330mm ±0.5 Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET Top View 12.00 ± 0.3mm Part Orientation Ø 13mm +1.5 -0.2 10.6mm Ø ...
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... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © ...