UPG2012TB Renesas Electronics America, UPG2012TB Datasheet - Page 3

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UPG2012TB

Manufacturer Part Number
UPG2012TB
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPG2012TB

Lead Free Status / Rohs Status
Supplier Unconfirmed
Document No. PG10218EJ01V0DS (1st edition)
Date Published December 2002 CP(K)
Printed in Japan
DESCRIPTION
mobile phone and another L-band application.
mounting.
FEATURES
• Supply voltage
• Switch control voltage
• Low insertion loss
• High isolation
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and Bluetooth
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
µ PG2012TB-E3
Remark To order evaluation samples, contact your nearby sales office.
The µ PG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: µ PG2012TB
6-pin super minimold
Package
: V
: V
: V
: L
: L
: L
: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, V
: ISL2 = 25 dB TYP. @ f = 2.5 GHz, V
TM
value)
value)
INS1
INS2
INS3
DD
cont (H)
cont (L)
etc.
= 2.7 to 3.0 V (2.8 V TYP.)
= 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, V
= 0.30 dB TYP. @ f = 2.0 GHz, V
= 0.30 dB TYP. @ f = 2.5 GHz, V
L-BAND SPDT SWITCH
Marking
= −0.2 to +0.2 V (0 V TYP.)
= 2.7 to 3.0 V (2.8 V TYP.)
G3A
DATA SHEET
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
GaAs INTEGRATED CIRCUIT
DD
DD
DD
= 2.8 V, V
= 2.8 V, V
= 2.8 V, V
Supplying Form
DD
DD
µ µ µ µ PG2012TB
= 2.8 V, V
= 2.8 V, V
cont
cont
cont
= 2.8 V/0 V (Reference
   
= 2.8 V/0 V
= 2.8 V/0 V (Reference
cont
NEC Compound Semiconductor Devices 2002
cont
= 2.8 V/0 V
= 2.8 V/0 V

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