UPC2756T-E3 Renesas Electronics America, UPC2756T-E3 Datasheet
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UPC2756T-E3
Specifications of UPC2756T-E3
Related parts for UPC2756T-E3
UPC2756T-E3 Summary of contents
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... SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2756T is a silicon monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with f This device was designed as the first down converter for GPS and wireless communications ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage Total Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. ...
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... -10 dBm LO IN -10 -20 -30 -40 -50 -60 1.4 1.6 LO Input Frequency, f UPC2756T SCATTERING PARAMETERS Port Vcc = 100 MHz 330.7 — j861.6 2: 500 MHz 38.8 — j194.3 3: 900 MHz 25.5 — j107.6 4: 1500 MHz 20.5 — j60.7 5. 1900 MHz 17.9 — j44.2 6. 3000 MHz 19.5 — ...
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... OUTPUT 0.13±0.1 APPLICATION CIRCUIT EXAMPLE (Units in mm BIAS 4 0.95 5 0.5 MIN 6 * Recommended Varactor Diodes: ORDERING INFORMATION PART NUMBER UPC2756T-E3 Note: Embossed Tape wide, Pins are in tape pull-out direction. RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS (Bottom View) (Top View VARACTOR* DIODES L 5nH ...