BP 104 FAS OSRAM Opto Semiconductors Inc, BP 104 FAS Datasheet - Page 2

• Manufacturer Part Number: BP 104 FAS
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BP 104 FAS

• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.65A/W
• Peak Wavelength: 880nm
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 34uA
• Rise Time: 20ns
• Fall Time: 20ns
• Photodiode Material: Si
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMT
• Lead Free Status / Rohs Status: Compliant

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
Total power dissipation
Kennwerte (T
Characteristics
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
Dark current
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Quantenausbeute
Quantum yield
Leerlaufspannung,
Open-circuit voltage
Kurzschlussstrom,
Short-circuit current
2007-04-18
R
= 10 % von
= 10 % of
= 5 V, E
e
S
=1 mW/cm
max
S
V
A
max
R
= 25
T
= 10 V
A
= 25 ° C
E
E
e
e
°
= 0.5 mW/cm
C, λ = 880 nm)
= 0.5 mW/cm
2
2
2
Symbol
Symbol
T
V
P
Symbol
Symbol
I
λ
λ
A
ϕ
I
S
η
V
I
P
R
SC
2
λ
op
S max
R
tot
O
;
T
stg
BP 104 FAS, BP 104 FASR
Wert
Value
– 40 … + 100
20
150
Wert
Value
34 (≥ 25)
880
730 … 1100
4.84
± 60
2 (≤ 30)
0.65
0.90
330 (≥ 250)
16
Einheit
Unit
° C
V
mW
Einheit
Unit
µA
nm
nm
mm
Grad
deg.
nA
A/W
Electrons
Photon
mV
µA
2