BF998B-GS18 Vishay, BF998B-GS18 Datasheet - Page 2

• Manufacturer Part Number: BF998B-GS18
• Manufacturer: Vishay

Specifications of BF998B-GS18

• Application: UHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 28@8VdB
• Noise Figure (max): 1.5(Typ)dB
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.024S
• Input Capacitance (typ)@vds: 2.1@8V@Gate 1/1.1@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.05@8VpF
• Reverse Capacitance (typ): 0.025@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

BF998 / BF998R / BF998RW
Vishay Semiconductors
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Electrical AC Characteristics
T
V
www.vishay.com
2
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current ± V
Gate 2 - source leakage current ± V
Drain current
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
amb
amb
amb
DS
on glass fibre printed board (25 x 20 x 1.5) mm
= 8 V, I
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz
T
1)
I
± I
± I
V
V
V
V
D
amb
DS
DS
DS
G1S
= 10 µA, - V
G1S
G2S
G1S
G2S
= 8 V, V
= 8 V, V
= 8 V, V
≤ 60 °C
= 0, V
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
Test condition
Test condition
Test condition
Test condition
G2S
G2S
G1S
G1S
G1S
3
G2S
G1S
= 4 V, I
= 4 V
plated with 35 µm Cu
= 0, V
= 0, I
G2S
G1S
= - V
= V
= V
D
= V
= V
G2S
D
G2S
DS
DS
= 20 µA
= 20 µA
DS
DS
= 0
= 0
= 4 V
= 4 V
= 0
= 0
BF998RAW
BF998RBW
BF998RW
BF998RA/
BF998RB/
BF998R/
BF998A/
BF998B/
Symbol
BF998/
C
C
|y
C
C
Part
issg1
issg2
± V
21s
± I
oss
rss
Symbol
Symbol
R
G1/G2SM
|
G1S/G2S
V
T
P
T
thChA
I
DS
Ch
stg
D
tot
± V
± V
- V
- V
V
Symbol
± I
± I
Min
G1S(OFF)
G2S(OFF)
(BR)G1SS
(BR)G2SS
21
(BR)DS
I
I
I
DSS
DSS
DSS
G1SS
G2SS
- 65 to + 150
Value
Value
1.05
Typ.
Min
200
150
450
9.5
2.1
1.1
12
30
10
12
24
25
7
7
7
4
4
Typ.
1.0
0.6
Document Number 85011
Max
2.5
Rev. 1.6, 31-Aug-05
10.5
Max
2.0
1.0
14
14
50
50
18
18
K/W
Unit
mW
Unit
mA
mA
°C
°C
V
V
Unit
mS
pF
pF
pF
fF
Unit
mA
mA
mA
nA
nA
V
V
V
V
V