NE55410GR-T3-AZ CALIFORNIA EASTERN LABS, NE55410GR-T3-AZ Datasheet

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NE55410GR-T3-AZ

Manufacturer Part Number
NE55410GR-T3-AZ
Description
Manufacturer
CALIFORNIA EASTERN LABS
Datasheet
1.NE55410GR-T3-AZ.pdf (14 pages)

Specifications of NE55410GR-T3-AZ

Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.25A
Drain Source Voltage (max)
65V
Output Power (max)
2W@Q1/10W@Q2
Power Gain (typ)@vds
30@28VdB
Frequency (min)
100MHz
Frequency (max)
2.6GHz
Package Type
HTSSOP
Pin Count
16
Forward Transconductance (typ)
0.09@Q1/0.45@Q2S
Operating Temp Range
-65C to 150C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
40000mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
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Part Number:
NE55410GR-T3-AZ
Manufacturer:
VISHAY
Quantity:
40 000
Company:
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<R>
<R>
Document No. PU10542EJ03V0DS (3rd edition)
Date Published January 2007 NS CP(N)
DESCRIPTION
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
• Two different FET’s (Q1 : P
• Over 25 dB gain available by connecting two FET’s in series
• High 1 dB compression output power : P
• High drain efficiency
• Low intermodulation distortion
• Single Supply (V
• Excellent Thermal Stability
• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
• Integrated ESD protection
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
• Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc.
• UHF-band TV transmitter PA
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
DS
: 3 V
N-CHANNEL SILICON POWER LDMOS FET
V
out
DS
= 2 W, Q2 : P
32 V)
The mark <R> shows major revised points.
:
:
:
:
:
: IM
G
G
P
f
=
O (1 dB) (Q1)
O (1 dB) (Q2)
d (Q1)
d (Q2)
L (Q1)
L (Q2)
3 (Q1)
2
out
DATA SHEET
1
= 52% TYP. (V
= 46% TYP. (V
3
= 13.5 dB TYP. (V
= 11.0 dB TYP. (V
= 10 W) in one package
= 40 dBc TYP. (V
2
5 .
LDMOS FIELD EFFECT TRANSISTOR
2 /
= 35.4 dBm TYP. (V
= 40.4 dBm TYP. (V
1
4
7
5 .
M
DS
DS
H
, z
= 28 V, I
= 28 V, I
DS
DS
P
DS
out
= 28 V, I
= 28 V, I
= 28 V, I
= 33 dBm (2 tones) )
DS
DS
Dset (Q1)
Dset (Q2)
= 28 V, I
= 28 V, I
Dset (Q1)
Dset (Q2)
Dset (Q1+Q2)
NE55410GR
= 20 mA, f = 2 140 MHz)
= 100 mA, f = 2 140 MHz)
Dset (Q1)
Dset (Q2)
= 20 mA, f = 2 140 MHz)
= 100 mA, f = 2 140 MHz)
= 120 mA,
= 20 mA, f = 2 140 MHz)
= 100 mA, f = 2 140 MHz)
2004, 2007

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NE55410GR-T3-AZ Summary of contents

Page 1

... FOR VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability ...

Page 2

... ORDERING INFORMATION Part Number Order Number NE55410GR NE55410GR-T3-AZ Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE55410GR ...

Page 3

... DSS (Q1 (Q1 DSS (Q1) DSS GSS (Q2) GSS DSS (Q2) DSS (Q2 100 mA m (Q2 DSS (Q2) DSS Data Sheet PU10542EJ03V0DS NE55410GR MIN. TYP. MAX. Unit 2.5 3.0 C/W Unit V V dBm dBm dBm dBm MIN. TYP. MAX. Unit 2.2 2.8 3 2.0 2.6 3 ...

Page 4

... MHz dB 120 mA (Q1 + Q2) d Dset P out Note4 132.5/2 147.5 MHz carrier W-CDMA 3GPP, Test Model1, d 64DPCH, 67% Clipping 120 mA (Q1 + Q2), Dset Ave dBm out Data Sheet PU10542EJ03V0DS NE55410GR MIN. TYP. MAX. 35.4 dBm 40.4 dBm 40.5 dBm 49 14 41.5 dBm ...

Page 5

... DS Dset IM / –10 Lower Upper 70 –20 60 – – –50 20 – – tones Output Power 100 W-CDMA 3GPP, Test Model DPCH, 67% Clipping, Center Frequency 2.14GHz MHz spacing (dBm) Data Sheet PU10542EJ03V0DS NE55410GR vs. 2 TONES OUTPUT POWER CW 960 MHz, 1 MHz Spacing (dBm) out 5 ...

Page 6

... S-PARAMETERS <R> S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html 6 Data Sheet PU10542EJ03V0DS NE55410GR ...

Page 7

... TL11 1.0 3.0 TL12 1.0 5.0 TL13 0.8 48.0 TL14 1.0 6.5 TL15 1.0 10.5 TL16 1.0 9.5 TL17 1.0 10.0 TL18 1.0 6.0 TL19 1.0 3.0 Data Sheet PU10542EJ03V0DS NE55410GR V (+ 0.001 F TL5 TL6 TL7 TL14 TL15 TL16 TL17 TL18 0. RFout ...

Page 8

... EVALUATION CIRCUIT (f = 840 to 960 MHz + (Q1) 0.22 F 6 (Valiable 2 1.5 pF 0.001 + (Q1 120 mA) DS Dset 6.8 k 0.047 F (Valiable + (Q2) Data Sheet PU10542EJ03V0DS NE55410GR (Q2) 0. out 9 pF ...

Page 9

... TL14 1.0 25.0 TL15 2.5 2.5 TL16 1.0 27.0 TL17 1.0 2.0 TL18 5.0 4.0 TL19 5.0 2.0 TL20 1.0 12.5 TL21 1.0 5.5 Data Sheet PU10542EJ03V0DS NE55410GR = 120 mA 0.22 F TL8 L 7 TL9 TL11 TL17 TL18 TL19 TL20 TL21 15 pF ...

Page 10

... EVALUATION CIRCUIT ( 090 to 2 190 MHz, V <R> + (Q1) (Potentiometer) 0. 1 (Q1 120 mA) DS Dset (Potentiometer) Data Sheet PU10542EJ03V0DS NE55410GR (Q2 0. out (Q2) ...

Page 11

... Remark ( ): Reference value LAND PATTERN (UNIT: mm) Remarks1. Via holes : 158 holes <R> 2. Hole size : 0. Min. spacing : 0.354 Solder resist or etching (1.8) 0.20±0. (2.5) 0.9±0.2 6.40 5.20 0.10 0.50 1.50 4.00 0.48 Data Sheet PU10542EJ03V0DS NE55410GR (0.1) 11 ...

Page 12

... Caution Do not use different soldering methods together (except for partial heating 260 C or below seconds or less times : 0.2%(Wt.) or below : 260 C or below time : 0.2%(Wt.) or below : 350 C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PU10542EJ03V0DS NE55410GR For soldering IR260 seconds WS260 HS350 ...

Page 13

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NE55410GR M8E 02. 11-1 ...

Page 14

Subject: Compliance with EU Dire ctives CEL certifies, to its kno w ledge, that semicondu ctor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical ...

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