MC33179D ON Semiconductor, MC33179D Datasheet - Page 5
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MC33179D
Manufacturer Part Number
MC33179D
Description
Op Amps 2-18V Quad Low Power
Manufacturer
ON Semiconductor
Datasheet
1.MC33178PG.pdf
(19 pages)
Specifications of MC33179D
Number Of Channels
4
Voltage Gain Db
106.02 dB
Common Mode Rejection Ratio (min)
80 dB
Input Voltage Range (max)
Positive Rail - 2 V
Input Voltage Range (min)
Negative Rail + 2 V
Input Offset Voltage
3 mV
Operating Supply Voltage
36 V
Supply Current
1.7 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-14
Maximum Dual Supply Voltage
+/- 18 V
Minimum Operating Temperature
- 40 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC33179DG
Manufacturer:
ON
Quantity:
11 560
Part Number:
MC33179DG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MC33179DR2
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MC33179DR2G
Manufacturer:
ON
Quantity:
11 560
Part Number:
MC33179DR2G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MC33179DTBR2G
Manufacturer:
ON Semiconductor
Quantity:
1 950
AC ELECTRICAL CHARACTERISTICS
Slew Rate
Gain Bandwidth Product (f = 100 kHz)
AC Voltage Gain (R
Unity Gain Bandwidth (Open−Loop) (R
Gain Margin (R
Phase Margin (R
Channel Separation (f = 100 Hz to 20 kHz)
Power Bandwidth (V
Total Harmonic Distortion (R
Open Loop Output Impedance
Differential Input Resistance (V
Differential Input Capacitance (V
Equivalent Input Noise Voltage (R
Equivalent Input Noise Current
2400
2000
1600
1200
(V
(f = 1.0 kHz)
(f = 10 kHz)
(f = 20 kHz)
(V
f = 10 Hz
f = 1.0 kHz
f = 10 Hz
f = 1.0 kHz
800
400
in
O
0
−60 −40 −20
= −10 V to +10 V, R
= 0 V, f = 3.0 MHz, A
MC33178D
MC33178P/9P
MC33179D
Figure 2. Maximum Power Dissipation
L
= 600 W, C
L
= 600 W, C
L
O
T
= 600 W, V
0
A
= 20 V
, AMBIENT TEMPERATURE (°C)
versus Temperature
Characteristics
20
L
V
= 2.0 kW, C
L
L
pp,
= 10 V)
= 0 pF)
L
= 600 W,, V
40
= 0 pF)
CM
O
R
CM
S
L
= 0 V, f = 20 kHz)
= 0 V)
60
= 600 W, THD ≤ 1.0%)
= 100 W,)
= 0 V)
L
L
80 100 120
= 600 W, C
= 100 pF, A
O
= 2.0 V
(V
CC
= +15 V, V
pp
L
V
= 0 pF)
, A
140
= +1.0 V)
V
http://onsemi.com
= +1.0 V)
160
EE
180
= −15 V, T
5
21, 23, 24
22, 23, 24
−1.0
−2.0
−3.0
−4.0
Figure
17, 32
19, 20
4.0
3.0
2.0
1.0
A
18
25
26
27
28
29
0
−55
= 25°C, unless otherwise noted.)
Figure 3. Input Offset Voltage versus
−25
Symbol
Temperature for 3 Typical Units
GBW
BW
THD
A
|Z
BW
SR
A
f
CS
R
C
e
i
VO
n
m
m
O
in
in
n
T
p
|
A
, AMBIENT TEMPERATURE (°C)
0
Unit 1
Unit 2
Unit 3
Min
1.2
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
25
0.0024
0.014
0.024
−120
0.33
0.15
Typ
150
200
2.0
5.0
3.0
8.0
7.5
50
50
15
60
32
10
75
Max
V
V
R
V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CC
EE
CM
S
= 10 W
= +15 V
= −15 V
= 0 V
100
pA/ Hz
nV/ Hz
V/ms
MHz
MHz
Unit
Deg
kHz
dB
dB
dB
kW
pF
%
W
√
√
125