SST25VF040B-50-4C-QAF Microchip Technology, SST25VF040B-50-4C-QAF Datasheet - Page 19

Flash 512K X 8 14 us

SST25VF040B-50-4C-QAF

Manufacturer Part Number
SST25VF040B-50-4C-QAF
Description
Flash 512K X 8 14 us
Manufacturer
Microchip Technology
Datasheet

Specifications of SST25VF040B-50-4C-QAF

Memory Type
NAND
Memory Size
4 Mbit
Architecture
Sectored
Interface Type
SPI
Access Time
50 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Package / Case
WSON-8
Organization
32 KB
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST25VF040B-50-4C-QAF
Manufacturer:
MIT
Quantity:
6 221
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Enable-Write-Status-Register (EWSR)
Write-Status-Register (WRSR)
The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR)
instruction and opens the status register for alteration. The Write-Status-Register instruction must be
executed immediately after the execution of the Enable-Write-Status-Register instruction. This two-
step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP
(software data protection) command structure which prevents any accidental alteration of the status
register values. CE# must be driven low before the EWSR instruction is entered and must be driven
high before the EWSR instruction is executed.
The Write-Status-Register instruction writes new values to the BP3, BP2, BP1, BP0, and BPL bits of
the status register. CE# must be driven low before the command sequence of the WRSR instruction is
entered and driven high before the WRSR instruction is executed. See Figure 19 for EWSR or WREN
and WRSR instruction sequences.
Executing the Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to
“1”. When the WP# is low, the BPL bit can only be set from “0” to “1” to lock-down the status register,
but cannot be reset from “1” to “0”. When WP# is high, the lock-down function of the BPL bit is disabled
and the BPL, BP0, and BP1 and BP2 bits in the status register can all be changed. As long as BPL bit
is set to 0 or WP# pin is driven high (V
the WRSR instruction, the bits in the status register can all be altered by the WRSR instruction. In this
case, a single WRSR instruction can set the BPL bit to “1” to lock down the status register as well as
altering the BP0, BP1, and BP2 bits at the same time. See Table 2 for a summary description of WP#
and BPL functions.
Figure 19:Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Sta-
SCK
CE#
SO
SI
MODE 3
MODE 0
tus-Register (WRSR) Sequence
0 1 2 3 4 5 6 7
MSB
50 or 06
IH
19
) prior to the low-to-high transition of the CE# pin at the end of
HIGH IMPEDANCE
MODE 3
MODE 0
MSB
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
4 Mbit SPI Serial Flash
01
MSB
7 6 5 4 3 2 1 0
REGISTER IN
STATUS
SST25VF040B
S71295-06-000
Data Sheet
1295 EWSR.0
02/11

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