SI6967DQ-T1 Vishay, SI6967DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6967DQ-T1
• Description: MOSFET Small Signal 8V 5A 1.1W
• Manufacturer: Vishay

Specifications of SI6967DQ-T1

• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: +/- 5 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70811
S-81221-Rev. D, 02-Jun-08
0.10
0.08
0.06
0.04
0.02
4.5
3.6
2.7
1.8
0.9
30
24
18
12
0
6
0
0
0
0
0
V
GS
V
I
D
= 1.8 V
DS
On-Resistance vs. Drain Current
= 5.0 A
6
= 6 V
4
V
DS
2
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
- Total Gate Charge (nC)
D
GS
- Drain Current (A)
Gate Charge
12
= 5 thru 2,5 V
8
4
V
GS
2 V
18
= 2.5 V
12
V
GS
1.5 V
1 V
6
= 4.5 V
24
16
30
20
8
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
24
18
12
6
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
0.5
= 5.0 A
= 4.5 V
V
V
T
Transfer Characteristics
DS
0
GS
2
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.0
C
25
oss
Capacitance
T
1.5
50
4
25 °C
Vishay Siliconix
C
C
= - 55 °C
iss
75
Si6967DQ
2.0
100
www.vishay.com
6
125 °C
2.5
125
150
3.0
8
3