SI4936ADY-T1 Vishay, SI4936ADY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4936ADY-T1
• Description: MOSFET Small Signal 30V 5.9A 2W
• Manufacturer: Vishay

Specifications of SI4936ADY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.9 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71132.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.02
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
0
Single Pulse
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
I
D
50
= 250 µA
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
50
40
30
20
10
0
10
1
10
-1
-3
10
-2
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
Time (s)
- T
t
S09-0869-Rev. D, 18-May-09
A
1
1
= P
1
t
Document Number: 71132
2
DM
Z
thJA
100
thJA
t
t
1
2
10
(t)
= 90 °C/W
100
600
10
600