SI2312DS-T1 Vishay, SI2312DS-T1 Datasheet - Page 4

• Manufacturer Part Number: SI2312DS-T1
• Description: MOSFET Small Signal 20V 3.77A
• Manufacturer: Vishay

Specifications of SI2312DS-T1

• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.77 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71338.
www.vishay.com
Si2312DS
Vishay Siliconix
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.1
−0.2
−0.3
−0.4
0.2
0.1
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
− Temperature (_C)
25
10
−3
Single Pulse
I
D
50
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
10
100
−2
125
Square Wave Pulse Duration (sec)
150
10
−1
1
12
10
8
6
4
2
0
0.01
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Single Pulse Power
DM
T
JM
A
− T
= 25_C
Time (sec)
t
1
A
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
S-50574—Rev. E, 04-Apr-05
1
2
(t)
Document Number: 71338
10
= 166_C/W
600
100
600