SI3456DV-T1 Vishay, SI3456DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3456DV-T1
• Description: MOSFET Small Signal 30V 5.1A 2W
• Manufacturer: Vishay

Specifications of SI3456DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

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4
Si3456DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.1
20
10
0.6
0.4
0.2
1
2
1
0.0
- 50
10
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
I
- Temperature (_C)
25
D
T
= 250 mA
J
0.6
= 150_C
10
50
-3
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.0
T
100
J
= 25_C
1.2
125
Square Wave Pulse Duration (sec)
150
10
1.4
-2
0.10
0.08
0.06
0.04
0.02
0.00
10
25
20
15
10
0.01
-1
5
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 5.1 A
2
V
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
Single Pulse Power
P
0.10
DM
JM
- T
4
Time (sec)
t
1
A
1
= P
t
2
DM
S-531725—Rev. C, 18-Aug-03
Z
thJA
Document Number: 70659
thJA
6
t
t
1
2
1.00
(t)
= 62.5_C/W
8
10
10.00
10