SI6965DQ-T1 Vishay, SI6965DQ-T1 Datasheet
SI6965DQ-T1
Specifications of SI6965DQ-T1
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SI6965DQ-T1 Summary of contents
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... Document Number: 70798 S-56943—Rev. B, 02-Nov-98 I (A) D 5.0 3 P-Channel MOSFET Symbol stg Symbol Typical t 10 sec R R thJA thJA Steady State 85 www.vishay.com FaxBack 408-970-5600 Si6965DQ Vishay Siliconix P-Channel MOSFET Limit Unit – 5.0 4 –1.5 1 0.96 –55 to 150 C Maximum Unit 83 C/W C/W 2-1 ...
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... Si6965DQ Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... V GS 500 On-Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si6965DQ Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.6 1.2 1.8 2.4 3.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage ( ...
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... Si6965DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A 0.6 D 0.4 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...